Inorganic Protection Layer for Semiconductor Redistribution Structure
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in preventing oxygen and water vapor permeation, which can lead to delamination and reduce the yield rate of semiconductor packages due to the formation of copper oxide on redistribution circuit layers.
Innovation Solution
An inorganic protection layer, such as aluminum oxide or silicon nitride, is formed over the redistribution structure using atomic layer deposition to significantly reduce oxygen and water vapor permeability, preventing copper oxide formation and enhancing electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an organic polymer layer is used to cover the redistribution structure, then the manufacturing process is simple and cost-effective, but oxygen and water vapor permeation occurs leading to copper oxide formation and delamination
Solution Approach 1:
The patent applies composite materials by combining an organic polymer layer with an inorganic protection layer (aluminum oxide or silicon nitride) to create a multi-layer protective structure. The organic polymer provides manufacturing simplicity and cost-effectiveness, while the inorganic layer provides superior barrier properties against oxygen and water vapor permeation, preventing copper oxide formation and delamination.
2Productivity
If no protection layer is used on the redistribution structure, then the manufacturing process is simplest, but copper oxide forms on the redistribution circuit layers reducing yield rate
Solution Approach 1:
The patent applies preliminary anti-action by forming an inorganic protection layer (aluminum oxide or silicon nitride) over the redistribution structure before any oxidation can occur. This pre-established barrier prevents oxygen and water vapor from reaching the copper redistribution circuit layers, thereby preventing copper oxide formation and maintaining high yield rates.
3Reliability
If a thick organic polymer layer is used to improve protection, then coverage is improved, but oxygen and water vapor permeation still occurs and manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by transitioning from a single organic polymer layer to a composite structure including an inorganic protection layer with fundamentally different barrier properties. The inorganic layer (aluminum oxide or silicon nitride) provides superior oxygen and water vapor permeation resistance with minimal thickness, improving protection effectiveness without significantly increasing structural complexity or manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The inorganic protection layer effectively prevents delamination and improves the yield rate of semiconductor packages by reducing oxygen and water vapor permeability, maintaining the integrity of the redistribution circuit layers and enhancing electrical performance.
Implementation Method 1
An inorganic protection layer, such as aluminum oxide or silicon nitride, is formed over the redistribution structure using atomic layer deposition
Data Source
AI summary
A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.