InP Cladding Recesses Mitigate Multipeak Emission in Semiconductor Devices
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Solution Overview
Problem
Bonding-type semiconductor light-emitting devices with an InP cladding layer exhibit multiple peaks in their emission spectrum, which can be detrimental for applications like sensors, due to interference between reflected light from the InP cladding layer and the reflective metal layer, limiting light emission output power.
Innovation Solution
Roughening the surface of the InP cladding layer by creating a plurality of recesses reduces the ratio of total reflection, mitigating the multipeak issue by interfering with the reflected light patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a bonding-type semiconductor light-emitting device with an InP cladding layer is used to improve light extraction efficiency, then external extraction efficiency is improved, but multiple peaks appear in the emission spectrum due to interference between reflected light from the InP cladding layer and the reflective metal layer
Solution Approach 1:
The invention converts the harmful interference effect into a beneficial one by intentionally designing the cavity length to satisfy the anti-resonance condition. The reflected light from the InP cladding layer and the reflective metal layer, which originally caused harmful multiple peaks, are transformed into a mechanism that suppresses unwanted wavelengths and enhances the desired emission wavelength, thereby converting the interference harm into a benefit for spectral purification.
Solution Approach 2:
The invention changes the optical parameter (cavity length) of the semiconductor light-emitting device to satisfy the anti-resonance condition. By precisely controlling the cavity length to be an odd multiple of a quarter wavelength, the device transforms the interference pattern from harmful multiple peaks to a beneficial single-peak spectrum, achieving spectral purification through parameter optimization.
2Power
If the cavity length is increased to improve light emission output power, then output power is improved, but the multipeak issue becomes more pronounced due to enhanced interference effects
Solution Approach 1:
The invention optimizes the cavity length parameter to satisfy the anti-resonance condition (odd multiple of quarter wavelength). This parameter optimization allows the device to achieve high output power while simultaneously suppressing the multipeak issue, as the anti-resonance condition creates destructive interference for unwanted wavelengths while constructive interference enhances the desired emission wavelength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The surface roughening of the InP cladding layer significantly reduces the occurrence of multiple peaks in the emission spectrum, enhancing the light emission output power and spectral purity of the semiconductor light-emitting device.
Implementation Method 1
most of incident light other than the orthogonal incident light does not pass through the InP cladding layer and returns to the semiconductor layer due to the total reflection and reflections at the interface of the InP cladding layer
Implementation Method 2
an observed multipeak in an emission spectrum was induced by interference between reflected light in an InP cladding layer and light reflected by a reflective metal layer
Implementation Method 3
provision of a plurality of recesses in a surface of the InP cladding layer mitigated a multipeak
Data Source
AI summary
Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.