InP Core Quantum Dots with ZnSxSe1-x/ZnS Shells

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Solution Overview

Problem

The production of highly luminescent InP nanostructures with high quantum yields has been challenging due to the difficulty in obtaining such materials, which are desirable for applications like LEDs and biomedical labeling, while cadmium-based quantum dots face environmental toxicity concerns.

Innovation Solution

The methods involve enriching InP nanostructures with indium and using a two-step growth process to form layered ZnSxSe1-x/ZnS shells, with C5-C8 carboxylic acid ligands facilitating the shell synthesis, resulting in core/shell nanostructures with high photoluminescence quantum yields and narrow size distributions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If CdSe core quantum dots are used to achieve high quantum yield, then luminescence efficiency is improved, but environmental toxicity increases

Engineering Contradiction:
Improvequantum yieldVSAvoidenvironmental toxicity
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the material composition parameter from cadmium-based (CdSe) to indium-based (InP) core material. This substitution maintains the quantum dot structure and size-tunable luminescence properties while eliminating the toxic cadmium element, thus resolving the contradiction between achieving high quantum yield and avoiding environmental toxicity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a simplified synthesis approach using InP cores with C5-C8 carboxylic acid ligands that can be readily exchanged for other ligands. This allows for easier disposal and replacement of the nanostructures without persistent environmental contamination from stable cadmium-based materials, addressing the toxicity concern through improved environmental fate

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Object-affected harmful factors

If InP-based nanostructures are used as substitutes for CdSe, then environmental toxicity is reduced, but quantum yield becomes difficult to achieve

Engineering Contradiction:
Improveenvironmental toxicityVSAvoidquantum yield
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent introduces C5-C8 carboxylic acid ligands as intermediary molecules between the InP core and the external environment. These ligands passivate the core surface effectively, reducing non-radiative recombination pathways and enabling high quantum yields (>65%) from InP-based structures while maintaining the environmentally friendly composition

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent creates composite nanostructures consisting of InP cores combined with organic C5-C8 carboxylic acid ligand shells. This composite approach leverages the non-toxic InP core material while using the organic ligands to provide surface passivation and enhance luminescence efficiency, successfully achieving both low toxicity and high quantum yield

Inventive Principle:
Principle #40Composite materials

3Reliability

If shell layers are added to InP cores to improve luminescence, then quantum yield increases, but manufacturing complexity increases

Engineering Contradiction:
Improvequantum yieldVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the shell formation process into two distinct steps: first forming an initial shell layer, then adding a second shell layer. This segmentation allows for optimized control of each layer's thickness and composition, achieving high quantum yields through systematic passivation while maintaining reproducible manufacturing through standardized sequential processing steps

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach achieves InP nanostructures with quantum yields of 65% or greater, offering enhanced luminescence properties suitable for various applications, including LEDs and biomedical uses, while avoiding the toxicity issues associated with cadmium-based materials.

Implementation Method 1

a shell surrounding the core is produced by providing one or more precursors and reacting the precursors in the presence of a C5-C8 carboxylic acid ligand to produce the shell

Methodology Applied
Scientific EffectChemical bonding: Chemical Bonding

Implementation Method 2

Highly luminescent nanostructures are particularly desirable for such applications... InP-based nanostructures have a similar emission range

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS10707371B2Highly luminescent nanostructures and methods of producing same
Publication Date: 2020.07.07 SHOEI CHEM IND CO LTD
  • US10707371B2 patent drawing
  • US10707371B2 patent drawing
  • US10707371B2 patent drawing

AI summary

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.