Selectively Inserted Diffusion Plates for Uniform Deposition
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving uniformity in deposition processes, particularly in ensuring consistent composition, contamination levels, defect density, and mechanical and electrical properties of deposited layers, as well as uniform thickness on nonplanar substrates and gap filling between metal lines.
Innovation Solution
A substrate-processing apparatus and method that includes a diffusion unit with selectively insertable diffusion plates into multiple diffusion areas, allowing for controlled diffusion of reaction gases to address non-uniformity by adjusting the process rate across different substrate areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single diffusion area is used for the entire substrate, then the device complexity is reduced, but the deposition uniformity across different substrate areas deteriorates
Solution Approach 1:
The diffusion unit is divided into multiple independent diffusion areas (first diffusion area, second diffusion area, third diffusion area) that can be independently controlled. Each diffusion area has its own diffusion plate that can be selectively inserted or removed, allowing independent adjustment of deposition rates for different substrate regions without increasing overall system complexity.
Solution Approach 2:
The diffusion plates are designed to be selectively insertable and removable from the diffusion areas during the deposition process. This dynamic configuration allows the system to adapt deposition conditions in real-time, enabling uniform deposition across nonplanar substrates by adjusting which diffusion areas are active at different stages of the process.
2Manufacturing precision
If diffusion plates are selectively inserted into multiple diffusion areas, then the deposition rate uniformity is improved, but the operation complexity increases
Solution Approach 1:
The diffusion unit is segmented into multiple independent diffusion areas with individually controllable diffusion plates. This segmentation allows selective insertion of only the necessary diffusion plates for each substrate region, simplifying the operation by avoiding the need to manage a single complex diffusion system for the entire substrate.
Solution Approach 2:
Different diffusion plates with specific configurations are inserted into specific diffusion areas based on the local deposition requirements of each substrate region. This local optimization approach improves deposition uniformity while keeping operations manageable by addressing only the specific needs of each area rather than the entire substrate uniformly.
3Manufacturing precision
If the reaction gas diffusion is not controlled, then the process is simpler, but the film thickness uniformity on nonplanar substrates deteriorates
Solution Approach 1:
The gas diffusion control system is divided into multiple independent diffusion areas, each with its own diffusion plate. This segmentation allows the reaction gas to be diffused and controlled independently in different regions, enabling precise control of film thickness on nonplanar substrates without requiring a single complex centralized control system.
Solution Approach 2:
Diffusion plates are introduced as intermediary components between the gas supply and the substrate. These plates mediate the reaction gas diffusion process, controlling the gas flow and distribution to achieve uniform film deposition on nonplanar surfaces while maintaining a relatively simple overall gas supply system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution secures process uniformity by controlling the deposition rate and improving the uniformity of deposited films, reducing electrical resistance and mechanical damage risks.
Implementation Method 1
a diffusion unit disposed in the buffer space to diffuse the reaction gas supplied through the gas supply port
Data Source
AI summary
According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port. The diffusion unit includes: a plurality of diffusion areas which are blocked from each other, in order to enable the reaction gas to be diffused therein; a plurality of diffusion holes for placing the gas supply port and the diffusion areas in communication; and one or more diffusion plates, the shapes of which correspond to the shapes of the diffusion areas, and which are selectively inserted into the respective diffusion areas.


