In-situ Deposition Process for Semiconductor Etching

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Solution Overview

Problem

The transfer of substrates between different processing chambers in semiconductor manufacturing introduces contamination risks and reduces process throughput due to the need for additional material deposition and replenishment, which is time-consuming and inefficient.

Innovation Solution

An in-situ deposition method is employed within an etching chamber, where gas precursors are pulsed onto the substrate to form a material layer, allowing for the attachment of specific elements and maintaining a substrate temperature below 110 degrees Celsius, enabling the formation of a material layer during or between patterning processes without the need for substrate transfer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If substrate is transferred between processing chambers for material deposition, then material layer can be formed, but contamination risk increases and process throughput decreases

Engineering Contradiction:

Improvematerial layer formation qualityVSAvoidsubstrate contamination

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent combines the deposition chamber and etching chamber into a single integrated processing chamber, allowing material deposition and patterning processes to occur in-situ without substrate transfer. This eliminates the contamination risk associated with transferring substrates between separate chambers while maintaining the ability to form high-quality material layers through sequential gas precursor pulsing.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The processing chamber is designed to perform multiple functions: it can conduct both deposition processes (forming material layers from gas precursors) and etching processes (patterning the substrate) within the same chamber environment. This multi-functionality eliminates the need for substrate transfer between specialized chambers while maintaining process quality.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Manufacturing precision

If substrate is transferred between processing chambers for material deposition, then material layer can be formed, but process throughput and cycle time are reduced

Engineering Contradiction:

Improvematerial layer formation qualityVSAvoidprocess throughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integrated chamber enables continuous processing where deposition and etching operations can be performed sequentially without interrupting the substrate in the chamber. This eliminates idle transfer time and maintains continuous productive action, improving overall process throughput and reducing cycle time.

Inventive Principle:

Principle #20Continuity of useful action

3Quantity of substance

If conventional deposition process is used, then material layer can be formed, but additional processing steps and time are required

Engineering Contradiction:

Improvematerial depositionVSAvoidprocessing cycle time

Core Design Contradiction:

Quantity of substanceVSLoss of time

Solution Approach 1:

The system performs preliminary material deposition actions by pulsing gas precursors and maintaining substrate temperature below 110°C to prepare the material layer in-situ before the etching process begins. This preliminary action eliminates the need for separate deposition processing steps and reduces overall cycle time.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The deposition process uses periodic pulsing of gas precursors rather than continuous flow, allowing controlled material layer formation. This periodic action enables efficient material deposition with precise control over layer formation, reducing unnecessary processing time while achieving the required material quantity.

Inventive Principle:

Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enhances etching selectivity and feature transfer dimension and profile control, improving manufacturing efficiency by reducing contamination risks and cycle time while maintaining precise control over material deposition.

Implementation Method 1

pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

attaching a first element from the first gas precursor onto the surface of the substrate

Methodology Applied

Scientific EffectAdsorption: Adsorption

Data Source

PatentUS11521849B2In-situ deposition process

Publication Date: 2022.12.06 APPLIED MATERIALS INC

AI summary

Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.