In Situ Liners for Chalcogenide Sidewalls
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Solution Overview
Problem
Conventional semiconductor fabrication processes for nonvolatile memory devices using chalcogenide materials often result in damage, diffusion, or unwanted reactions during high-temperature processing, leading to composition changes and ineffective passivation, which increases fabrication time and cost, and affects the thermal budget.
Innovation Solution
Doping chalcogenide materials with elements like aluminum, indium, or nickel to form in situ liners on sidewalls during patterning, which diffuse or re-sputter to create a protective layer that prevents undesired interactions with etchant chemistries and maintains the material composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition processes are used to form liner materials over chalcogenide materials, then the chalcogenide materials are protected from damage and diffusion, but the fabrication time increases and the thermal budget is negatively affected
Solution Approach 1:
The patent combines the liner formation with the chalcogenide material deposition process itself. The liner is formed in-situ during the deposition process, merging two separate steps (deposition of chalcogenide material and deposition of liner) into a single integrated process, thereby reducing fabrication time while maintaining protection of the chalcogenide materials
Solution Approach 2:
The liner is formed preliminarily during the deposition process before the chalcogenide material is fully deposited and before subsequent fabrication steps. This preliminary formation of the protective liner prevents damage and diffusion during the deposition process itself, eliminating the need for separate post-deposition liner formation steps
2Reliability
If conventional deposition processes are used to form liner materials, then the chalcogenide materials may be protected, but the composition of the chalcogenide materials is altered by diffusion
Solution Approach 1:
The patent uses an intermediary approach where the liner is formed as an integral part of the deposition process rather than as a separate deposited layer. The in-situ formed liner acts as a mediator that protects the chalcogenide material without introducing external materials that could cause diffusion or composition changes
Solution Approach 2:
The patent changes the deposition parameters to enable in-situ liner formation. By adjusting deposition conditions (such as temperature, pressure, or precursor ratios), the process forms the liner concurrently with the chalcogenide material deposition, preventing composition alteration while maintaining protection
3Reliability
If liner materials are deposited over chalcogenide materials, then adhesion may be improved, but the liner materials may delaminate from the surfaces
Solution Approach 1:
By merging the liner formation with the chalcogenide material deposition process, the liner and the underlying material are deposited simultaneously under the same conditions, creating strong interfacial bonding. This eliminates the delamination issues that occur when separate liner materials are deposited onto pre-formed chalcogenide surfaces
4Ease of manufacture
If conventional fabrication processes are used, then the manufacturing process is simpler, but the chalcogenide materials react with etchant or deposition chemistries
Solution Approach 1:
The protective liner is formed preliminarily during the deposition process, before the chalcogenide materials are exposed to etchant or deposition chemistries in subsequent steps. This preliminary protection prevents harmful reactions without complicating the overall fabrication process, as the liner formation is integrated into the existing deposition workflow
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The in situ formed liners effectively protect chalcogenide materials from damage and composition changes, allowing for improved adhesion and reduced chemical interactions, enhancing the reliability and efficiency of the semiconductor structure formation process.
Implementation Method 1
the dopant may diffuse in situ to exposed sidewalls of the material
Implementation Method 2
the dopant may re-sputter in situ on exposed sidewalls of the material
Data Source
AI summary
A semiconductor structure includes a plurality of stack structures overlying a substrate. Each stack structure includes a first chalcogenide material over a conductive material overlying the substrate, an electrode over the first chalcogenide material, a second chalcogenide material over the electrode, a liner on sidewalls of at least one of the first chalcogenide material or the second chalcogenide material, and a dielectric material over and in contact with sidewalls of the electrode and in contact with the liner. Related semiconductor devices and systems, methods of forming the semiconductor structure, semiconductor device, and systems, and methods of forming the liner in situ are disclosed.