Semiconductor Inspection Condition Generation via Scattering Intensity Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing inspection condition generation process for semiconductor devices is time-consuming and costly, requiring preparation of wafers for every layer type and thickness, and application of standard particles, leading to increased operation time and cost.
Innovation Solution
The process involves dividing the variation width of scattering intensity into regions based on intensity, transforming it into size using a sensitivity curve, and sharing inspection conditions across these regions, allowing for the selection of suitable inspection conditions for targeted substrates and reducing the need for repeated generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If inspection conditions are generated for every layer type and layer thickness using standard particles applied to prepared wafers, then measurement precision and reliability are improved, but loss of time and manufacturing cost increase significantly
Solution Approach 1:
The patent segments the continuous variation width of scattering intensity into multiple discrete regions based on intensity levels. This segmentation allows the system to handle diverse layer thicknesses and types by dividing them into manageable regions, each with representative inspection conditions, thereby reducing the time required to generate inspection conditions while maintaining detection accuracy across different segments
Solution Approach 2:
The patent creates representative inspection conditions for each scattering intensity region that can be copied and applied to multiple wafers with similar characteristics. Instead of generating unique inspection conditions for every single layer configuration, the system develops template conditions that can be reused across regions, significantly reducing generation time while preserving measurement precision through the representative nature of these copied conditions
2Adaptability or versatility
If inspection conditions are generated for every layer type and layer thickness, then adaptability to different semiconductor devices is improved, but manufacturing cost and operation complexity increase
Solution Approach 1:
The patent divides the diverse range of layer types and thicknesses into discrete scattering intensity regions, where each region is managed with its own set of representative inspection conditions. This segmentation approach maintains adaptability to different semiconductor devices by covering all regions, while reducing management complexity through the organized regional structure compared to handling each layer configuration individually
Solution Approach 2:
The patent develops inspection conditions that serve multiple functions across different layer types within the same scattering intensity region. A single set of representative inspection conditions can be applied universally to all wafers falling within a particular region, reducing the need for device-specific condition generation while maintaining adequate coverage through the universal applicability of region-based conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the operation time and cost of generating inspection conditions, enabling rapid inspection and early detection of process abnormalities, thus improving yield.
Implementation Method 1
a variation width of a scattering intensity is divided into plural regions as classified by an intensity on the basis of a relation between the layer thickness of layer formed on the substrate and the scattering intensity
Data Source
AI summary
The inspection conditions of a known inspection apparatus necessary for inspection are such that wafers are individually prepared for respective layer types and layer thicknesses, and standard particles having different sizes are applied to all of the wafers. Moreover, the wafers to which standard particles have been applied and which have been prepared for the respective layer types and layer thicknesses are inspected by the inspection apparatus to determine the optimal inspection conditions for the respective layer types and layer thicknesses. Therefore, there are problems that it requires long time and involves high cost to determine the inspection conditions. In the invention, the relation between the layer thickness and the scattering intensity in the inspection apparatus is calculated. The scattering intensity is divided into a plurality of intensity regions, and the inspection conditions optimized for the respective divided regions are determined. The inspection conditions are shared in each divided intensity region, whereby the time and cost necessary to determine the inspection conditions can be dramatically reduced.