Inspection Wafer Electrode Structure for Probe Contact Durability
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Solution Overview
Problem
Current semiconductor inspection tools face challenges in reliably evaluating the electrical characteristics of semiconductor wafers due to issues with contact resistance and foreign substances on the chuck stage, leading to increased manufacturing costs and reduced wafer reliability.
Innovation Solution
A semiconductor evaluation device with a chuck stage and probe unit that uses a wide-bandgap semiconductor wafer, including SiC, and incorporates protective electrodes with higher hardness than the main surface electrodes to prevent damage from probe needle contact, allowing for repeated use and improved inspection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a semiconductor wafer is used for inspection on the chuck stage, then electrical characteristics can be evaluated, but contact damage and foreign substance adherence reduce reliability and reuse duration
Solution Approach 1:
The patent introduces protective electrodes as an intermediary layer between the probe needle and the main surface electrodes. These protective electrodes absorb contact damage from probe needles, preventing direct damage to the main surface electrodes and reducing foreign substance adherence. This mediator approach maintains measurement precision while significantly improving inspection reliability and device reuse duration.
2Productivity
If the chuck stage is inspected repeatedly, then manufacturing costs are reduced, but contact damage accumulates and reduces inspection accuracy
Solution Approach 1:
The patent segments the electrode function into two distinct parts: main surface electrodes for electrical measurement and protective electrodes for mechanical protection. This segmentation allows the protective electrodes to bear the mechanical stress of repeated probe contact, while the main surface electrodes remain intact for accurate electrical measurements. As a result, the device can be reused more frequently without degrading inspection accuracy.
3Strength
If protective electrodes with higher hardness are used, then damage from probe contact is prevented, but device complexity increases
Solution Approach 1:
The patent merges the protective electrode and main surface electrode into a single integrated electrode structure on the semiconductor wafer. The protective electrodes are positioned around the main surface electrodes, forming a unified structure that provides both mechanical protection and electrical measurement functionality. This merging approach increases strength against probe contact while minimizing the increase in device complexity, as the additional protective elements are seamlessly integrated into the existing electrode layout.
Data Source
AI summary
A semiconductor structure for inspection includes a semiconductor plate having a first main surface on one side and a second main surface on the other side, an inspection region provided in the first main surface, a main surface electrode having a first hardness and covering the first main surface in the inspection region, and a protective electrode having a second hardness which exceeds the first hardness, covering the main surface electrode in the inspection region, and forming a current path between the second main surface and the protective electrode via the semiconductor plate.