Insulated Semiconductor Faceplate with Dielectric Inserts

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Solution Overview

Problem

Conventional semiconductor processing systems face challenges in protecting chamber components from plasma-induced degradation, leading to increased maintenance needs and reduced throughput due to the damage caused by local plasmas and sputtering in plasma environments.

Innovation Solution

The use of dielectric inserts within apertures in conductive faceplates, which are coated with ceramic material and feature channels for uniform precursor distribution, reduces degradation and enhances protection against plasma-induced damage, improving system performance and cost-effectiveness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If chamber components are protected by seasoning the chamber, then component degradation is reduced, but process queue times increase and throughput decreases

Engineering Contradiction:
Improvecomponent degradation resistanceVSAvoidthroughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The faceplate is pre-coated with dielectric material and inserts are pre-installed before chamber use, eliminating the need for time-consuming seasoning procedures. This preliminary preparation provides immediate plasma resistance without requiring extended conditioning cycles, thus maintaining high throughput while protecting components.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The faceplate with its dielectric coating and inserts serves as a sacrificial protective component that can be replaced rather than maintaining the entire chamber through seasonal conditioning. This disposable protective element absorbs plasma damage, protecting more critical chamber components without requiring lengthy maintenance cycles that would reduce throughput.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Manufacturing precision

If local plasmas are used for etching, then trench penetration and structure preservation are improved, but substrate damage through electric arcs increases

Engineering Contradiction:
Improvetrench etching qualityVSAvoidsubstrate damage
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The dielectric material coating on the faceplate acts as an intermediary between the plasma and the conductive faceplate substrate. This intermediate layer prevents direct plasma contact with the conductive surfaces, eliminating electric arc formation and substrate damage while preserving the benefits of local plasma etching for trench penetration and structure preservation.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If local plasmas are used for etching, then trench penetration is improved, but chamber component sputtering and degradation increase

Engineering Contradiction:
Improvetrench etching capabilityVSAvoidchamber component durability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The dielectric coating on the faceplate converts the harmful sputtering effect into a beneficial protective mechanism. The dielectric material absorbs the sputtering damage that would otherwise degrade conductive chamber components, allowing local plasma etching to proceed with high trench penetration capability while the faceplate sacrificially absorbs the degradation.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The faceplate assembly combines conductive material (for electrical functionality) with a dielectric coating layer (for plasma resistance). This composite structure allows the conductive base to maintain electrical properties for plasma generation while the dielectric outer layer protects against plasma-induced sputtering and degradation, extending chamber component durability.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively minimizes component degradation, ensures more uniform gas distribution, and reduces maintenance requirements, thereby enhancing the overall performance and efficiency of semiconductor processing systems.

Implementation Method 1

the conductive plate may include a layer of material, such as dielectric material, on all surfaces of the conductive plate that may be exposed to plasma

Methodology Applied
Scientific EffectDielectric insulation: Dielectric

Implementation Method 2

The layer of material may be formed from a dielectric material, and may further be a ceramic material

Methodology Applied
Scientific EffectCeramic coating protection: Coatings

Implementation Method 3

A plurality of o-rings may be positioned within annular channels, and each annular channel may be defined at least partially by each of the plurality of inserts

Methodology Applied
Scientific EffectElastic sealing: Elasticity

Data Source

PatentUS10170282B2Insulated semiconductor faceplate designs
Publication Date: 2019.01.01 APPLIED MATERIALS INC
  • US10170282B2 patent drawing
  • US10170282B2 patent drawing
  • US10170282B2 patent drawing

AI summary

An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.