Insulated Gate Semiconductor Device Floating Region Hole Stopper
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Solution Overview
Problem
Conventional insulated gate semiconductor devices face challenges in achieving both low on-voltage and low switching-loss due to issues with threshold voltage variations, voltage breakdown resistance, and the difficulty in accurately forming deep hole accumulation or barrier regions, which require specialized equipment and result in increased recovery loss.
Innovation Solution
The design incorporates a semiconductor device with a first conductivity type semiconductor substrate, second conductivity type channel regions, floating regions, a hole stopper layer, and an emitter electrode, where the hole stopper layer is formed in the floating regions to divide them into two layers, reducing switching loss and improving voltage breakdown resistance by limiting hole flow and modulating conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a deep hole accumulation region or barrier region is formed to reduce on-voltage, then on-voltage is reduced, but specialized equipment is required and manufacturing complexity increases
Solution Approach 1:
The invention extracts the complex deep region formation process and replaces it with a simpler alternative. Instead of forming deep hole accumulation regions or barrier regions that require specialized equipment, the patent uses a conventional semiconductor substrate with a carefully designed floating region structure that achieves the same voltage reduction effect through standard manufacturing processes.
Solution Approach 2:
The invention changes the approach from modifying deep region parameters (hole accumulation depth, barrier region concentration) to optimizing floating region parameters (position, size, conductivity). By adjusting the floating region's electrical characteristics and geometric parameters, the patent achieves on-voltage reduction without requiring deep region formation equipment.
2Loss of energy
If a deep hole accumulation region is formed to improve conductivity, then on-voltage is reduced, but voltage breakdown resistance deteriorates
Solution Approach 1:
The floating region acts as an intermediary element between the emitter and collector regions. It provides a controlled conductivity path that reduces on-voltage while maintaining voltage breakdown resistance. The floating region mediates the electrical characteristics, offering a middle ground between the high conductivity needed for low on-voltage and the high resistance needed for voltage breakdown protection.
Solution Approach 2:
The invention applies different electrical characteristics to different regions: the floating region has intermediate conductivity (neither fully depleted nor fully accumulated), creating localized quality variations. This allows the device to exhibit low on-voltage in the forward conduction path while maintaining high voltage breakdown resistance in the reverse blocking direction.
3Loss of energy
If threshold voltage is reduced to improve switching speed, then switching loss is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The floating region structure is designed to self-regulate the threshold voltage through its inherent electrical characteristics. The interaction between the floating region and adjacent doped regions creates automatic feedback that stabilizes the threshold voltage, reducing sensitivity to manufacturing variations and eliminating the need for precise threshold voltage control during fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces on-voltage and switching loss while enhancing voltage breakdown resistance, facilitating high-speed switching and improving the overall performance of the insulated gate semiconductor device.
Implementation Method 1
a hole stopper layer, and an emitter electrode, where the hole stopper layer is formed in the floating regions to divide them into two layers, reducing switching loss and improving voltage breakdown resistance by limiting hole flow and modulating conductivity
Implementation Method 2
reducing switching loss and improving voltage breakdown resistance by limiting hole flow and modulating conductivity
Data Source
AI summary
An insulated gate semiconductor device includes a semiconductor substrate, channel regions, floating regions, an emitter region, a body region, a hole stopper layer, and an emitter electrode. The channel regions and the floating regions are repeatedly arranged such that at least one floating region is located between adjacent channel regions. The emitter region and the body region are located in a surface portion of each channel region. The body region is deeper than the emitter region. The hole stopper layer is located in each floating region to divide the floating region into a first region and a second region. The emitter electrode is electrically connected to the emitter region and the first region.