Insulated Metal Substrate Rim Reinforcement Against Concave Bending
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Solution Overview
Problem
Conventional insulated metal substrates for power semiconductor devices suffer from concave bending during assembly and operation, leading to improper thermal interfaces and potential cracks in the dielectric layer.
Innovation Solution
An insulated metal substrate with a reinforcement structure is developed, featuring a metal base, a dielectric layer, and an electrically conductive layer, where the reinforcement structure is arranged in the peripheral region to provide mechanical stability and prevent concave bending.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulated metal substrate is used without a reinforcement structure, then the manufacturing process is simple, but the substrate suffers from concave bending during assembly and operation, leading to improper thermal interfaces and potential cracks in the dielectric layer
Solution Approach 1:
The substrate is divided into functional regions: a central active area for electrical components and a peripheral reinforcement region with increased thickness. This segmentation allows the structure to provide mechanical support where needed while maintaining simplicity in the functional areas.
Solution Approach 2:
The reinforcement structure is implemented by increasing the thickness dimension of the metal base in the peripheral region, creating a raised rim or flange structure. This dimensional change provides enhanced mechanical stability without adding lateral complexity to the substrate layout.
2Reliability
If the metal base thickness is increased to prevent concave bending, then mechanical stability improves, but the substrate height increases and thermal interface efficiency may deteriorate
Solution Approach 1:
The metal base thickness is segmented into two distinct values: a thinner central region (0.5-2mm) for optimal thermal contact, and a thicker peripheral region (1-5mm) for mechanical reinforcement. This segmentation resolves the contradiction by providing both thermal efficiency and structural stability.
Solution Approach 2:
Different thickness qualities are applied to different regions of the metal base: the central area maintains minimal thickness for thermal performance, while the peripheral area increases thickness for mechanical strength. Each region has the quality it needs locally without compromising the other.
3Reliability
If a uniform thick metal base is used, then mechanical stability is improved, but the manufacturing complexity and material usage increase
Solution Approach 1:
The metal base is segmented into zones of different thicknesses during the molding process, allowing variable thickness construction in a single manufacturing step. This avoids the need for multiple assembly operations while achieving the mechanical stability of a thicker structure.
Solution Approach 2:
The thickness parameter of the metal base is varied spatially across different regions rather than being uniform. This parameter change enables the structure to achieve enhanced mechanical stability in critical areas while maintaining manufacturing efficiency through a single-forming process.
Data Source
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AI summary
An insulated metal substrate (1) for a power semiconductor device is specified, comprising - a metal base (2), - a dielectric layer (3) arranged on the metal base (2), - an electrically conductive layer (4) arranged on the dielectric layer (3), and - a reinforcement structure (5), wherein - the reinforcement structure (5) is arranged in a peripheral region of the insulated metal substrate (1) at least partially surrounding a central region of the insulated metal substrate (1). Furthermore, a method for producing an insulated metal substrate is specified.