Insulating Cover Structure for High-Voltage Semiconductor Isolation
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Solution Overview
Problem
Power semiconductor devices, such as IGBTs and IEGTs, face challenges in withstanding high voltages due to potential discharge between the collector and emitter electrodes, which can degrade their performance and reliability.
Innovation Solution
The semiconductor device incorporates an insulating cover that sandwiches the semiconductor element from both sides, using a sintered resin to form an annular shape around the emitter and collector electrodes, thereby enhancing insulation and preventing discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the semiconductor device operates at high voltage, then the power handling capability is improved, but discharge between collector and emitter electrodes occurs causing reliability to deteriorate
Solution Approach 1:
An insulating cover made of sintered resin is introduced as an intermediary component between the collector electrode pad and emitter electrode pad. This cover prevents direct discharge between the electrodes while allowing the device to operate at high voltages, thus resolving the contradiction between power handling capability and reliability.
Solution Approach 2:
The insulating cover is formed as a thin film structure that covers the electrode pads. This thin film provides effective insulation against discharge while maintaining the compact structure and electrical performance of the semiconductor device at high voltage operating conditions.
2Reliability
If an insulating cover is added to prevent discharge, then reliability is improved, but device complexity increases
Solution Approach 1:
The insulating cover is merged with the sealing structure of the semiconductor device. By integrating the insulating function into the existing sealing cover, the design avoids adding separate complex insulation components, thus improving reliability while minimizing increases in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses discharge between the collector and emitter electrodes, ensuring the semiconductor device can withstand high voltages without degrading the semiconductor characteristics, thus improving reliability and performance.
Implementation Method 1
using a sintered resin to form an annular shape around the emitter and collector electrodes
Data Source
AI summary
A semiconductor element extends along a first plane, includes opposing first and second surfaces and a third surface extending between respective ends of the first and second surfaces, and includes first and second electrode pads respectively provided in regions including the first and second surfaces. A first conductor is in contact with a first electrode pad and a first electrode. A second conductor is in contact with the second electrode pad and a second electrode. An insulating cover includes a first portion covering the third surface, a second portion connected to the first portion and opposing the first surface, and a third portion connected to the first portion, opposing the second surface, and sandwiching the semiconductor element with the second portion.