Insulating Thin Film for Void-Free Substrate Bonding
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Solution Overview
Problem
Three-dimensionally structured semiconductor devices face issues with void generation and decreased attaching strength due to misalignment and size differences in Cu electrodes during the manufacturing process, leading to separation of substrates.
Innovation Solution
A semiconductor device configuration where an insulating thin film, such as an oxidized or nitride film, is used to cover the attaching surfaces of two substrates, allowing the electrodes to deform and break through the film for direct electrical connection, thereby preventing voids and enhancing joining strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Cu electrodes are aligned directly for substrate attachment, then electrical connection is achieved, but misalignment and size differences cause void generation and decreased attaching strength
Solution Approach 1:
An insulating film is introduced as an intermediary layer between the Cu electrodes of the first and second substrates. This insulating film covers the attaching surfaces and allows the electrodes to be positioned without direct contact, preventing void formation while maintaining electrical connectivity through the deformable film structure.
Solution Approach 2:
The insulating film's mechanical properties are utilized to accommodate alignment variations. The film can deform and break locally to allow electrode contact while maintaining overall coverage, thus compensating for manufacturing precision variations in electrode alignment and size.
2Reliability
If Cu electrodes are directly joined for substrate attachment, then electrical connection is established, but voids form at the joining surface leading to substrate separation
Solution Approach 1:
The insulating film serves as a mediator that prevents direct Cu-Cu contact in areas where misalignment occurs. By covering the attaching surfaces, it eliminates the formation of voids that would otherwise occur at the joining interface, ensuring continuous substrate attachment without separation.
Solution Approach 2:
The insulating film is applied beforehand to cover the attaching surfaces before electrode alignment. This pre-existing layer acts as a cushion that prevents void formation by filling gaps and accommodating alignment variations, thereby preventing substrate separation before it can occur.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability of semiconductor devices by preventing voids at the joining interface and increasing the attaching strength between substrates, resulting in more reliable semiconductor devices with enhanced electrical connectivity.
Implementation Method 1
the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other
Data Source
AI summary
A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.