Insulating Fin Height Layout for Shared SRAM Transistor Gates
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, challenges arise in integrating more components into a given area, including issues with transistor gate contacts and the need for efficient manufacturing processes that allow for shared gate structures between transistors, particularly in static random-access memory (SRAM) cells.
Innovation Solution
The formation of insulating fins of different heights allows for a gate structure to be shared between some transistors, with the gate extending over one type of fin but not another, utilizing a multi-layer stack and epitaxial source/drain regions to enhance integration density and reduce leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision and device reliability deteriorate
Solution Approach 1:
The patent segments the transistor structure by introducing insulating fins of different heights between adjacent transistors. This segmentation allows for differentiated gate contact formation and shared gate structures while maintaining precise control over each transistor's electrical characteristics, thereby enabling higher integration density without sacrificing manufacturing precision
Solution Approach 2:
The patent introduces vertical dimensionality by forming insulating fins at different heights (first height and second height) rather than using planar isolation. This three-dimensional approach allows gate structures to be shared between transistors at different levels, increasing integration density while maintaining precise feature size control through vertical differentiation
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but device reliability deteriorates due to increased leakage and short channel effects
Solution Approach 1:
The patent applies local quality by creating insulating fins with different heights at different locations between transistors. The first insulating fins (first height) and second insulating fins (second height) provide localized electrical isolation tailored to specific transistor pairs, enabling shared gate structures while preventing leakage and short channel effects through position-dependent insulation
Solution Approach 2:
The insulating fins act as intermediary structures between adjacent transistors, providing electrical isolation while allowing gate structures to extend over multiple transistors. These intermediary fins enable the shared gate configuration to achieve higher integration density without compromising device reliability, as they mediate the electrical interaction between neighboring devices
3Productivity
If shared gate structures are implemented between transistors, then integration density increases, but device complexity increases
Solution Approach 1:
The patent employs asymmetry by forming insulating fins with two different heights (first height and second height) rather than uniform isolation structures. This asymmetric configuration enables selective gate sharing between adjacent transistors while maintaining distinct electrical characteristics for different transistor pairs, increasing integration density without excessively complicating the overall device structure
Data Source
AI summary
In an embodiment, a device includes: a first insulating fin; a second insulating fin; a nanostructure between the first insulating fin and the second insulating fin; and a gate structure wrapping around the nanostructure, a top surface of the gate structure disposed above a top surface of the first insulating fin, the top surface of the gate structure disposed below a top surface of the second insulating fin.