Insulating Gate Semiconductor Device Mitigating Short Channel Effect
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Solution Overview
Problem
Current semiconductor devices face challenges in effectively scaling and controlling current due to the short channel effect in multi-gate transistors, which affects the electric potential of channel regions and requires improved gate structures for enhanced performance.
Innovation Solution
The semiconductor device design includes active fins with varying lengths, dummy gates, normal gates, and insulating gates arranged in specific configurations to achieve electrical insulation and improved current control, with the insulating gate extending into the active fin to mitigate the short channel effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor scaling is performed to increase device density, then device density increases, but short channel effect worsens affecting electric potential control
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate, second gate, third gate) positioned at different locations along the active fin. This segmentation allows independent control of different channel regions, enabling better suppression of short channel effect while maintaining high device density through multi-gate configuration.
Solution Approach 2:
Different gate regions are assigned different functions: the first gate controls the main channel, the second gate suppresses short channel effect at one end, and the third gate suppresses it at the other end. This local differentiation of gate functions allows targeted control of electric potential in different channel regions, improving overall reliability while enabling scaling.
2Reliability
If gate length is increased to improve current control, then current control improves, but device scaling capability deteriorates
Solution Approach 1:
The solution transitions from controlling current solely through gate length (one dimension) to using multiple gates positioned at different locations along the active fin (adding spatial dimension). This multi-dimensional gate arrangement provides current control capability without requiring increased gate length, thus maintaining scaling capability while improving current control.
Solution Approach 2:
Additional gates are introduced as intermediary control elements between the source and drain regions. These intermediate gates (second and third gates) provide localized electric potential control that mediates the short channel effect, enabling better current control without extending the overall gate length and preserving scaling capability.
Data Source
AI summary
Semiconductor devices are provided including a first active fin extending in a first direction and a second active fin spaced apart from the first active fin in a second direction perpendicular to the first direction, the second active fin extending in the first direction, the second active fin having a longer side shorter than a length of a longer side of the first active fin. A first dummy gate extends in the second direction overlapping a first end of each of the first and second active fins. A first metal gate extends in the second direction intersecting the first active fin and overlapping a second end of the second active fin. A first insulating gate extends in the second direction intersecting the first active fin. The first insulating gate extends into the first active fin.