Insulating Gate Separation Structure for Integrated Circuits

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

As device dimensions decrease and packing densities of transistor devices increase, the aspect ratio of sacrificial gate structures in integrated circuits becomes higher, making the cutting of these structures into individual segments more problematic, leading to incomplete removal of sacrificial gate material and potential device failure.

Innovation Solution

The implementation of an insulating gate separation structure with a specific configuration, comprising an upper and lower portion with varying lateral widths, forming an inverted 'T' configuration, which facilitates complete removal of sacrificial gate structures and improves the formation of replacement gate structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device dimensions are decreased and packing density is increased, then transistor integration is improved, but the aspect ratio of sacrificial gate structures becomes higher making cutting more problematic

Engineering Contradiction:

Improvetransistor packing densityVSAvoidcutting of sacrificial gate structures

Core Design Contradiction:

ProductivityVSEase of manufacture

Solution Approach 1:

The sacrificial gate structure is divided into multiple segments separated by gaps, allowing each segment to be independently managed and removed. This segmentation reduces the complexity of cutting continuous long structures while maintaining high device density.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

An insulating material is introduced as an intermediary substance to fill the gaps between sacrificial gate segments. This intermediary material facilitates the separation and removal process by providing a physical barrier that enables complete sacrificial gate material elimination without direct contact between adjacent segments.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If sacrificial gate structures are not completely removed, then manufacturing complexity is reduced, but device failure risk increases

Engineering Contradiction:

Improvesacrificial gate structure removalVSAvoiddevice failure risk

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The insulating material is selectively deposited only in the gap regions between sacrificial gate segments, extracting and isolating the sacrificial gate material from the active device regions. This enables complete removal of sacrificial gate material without affecting the surrounding structures.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The gaps between sacrificial gate segments, which initially represent manufacturing challenges, are converted into beneficial features by filling them with insulating material. This transformation enables complete sacrificial gate removal and prevents device failure.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If insulating material is deposited to fill gaps between sacrificial gate structures, then complete removal of sacrificial gate material is achieved, but the structure becomes more complex

Engineering Contradiction:

Improvecomplete removal of sacrificial gate materialVSAvoidinsulating gate separation structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The insulating material is applied locally only in the gap regions between sacrificial gate segments, rather than uniformly across the entire substrate. This localized application achieves complete sacrificial gate removal while minimizing the addition of structural complexity.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS10431499B2Insulating gate separation structure

Publication Date: 2019.10.01 GLOBALFOUNDRIES US INC

AI summary

One illustrative integrated circuit product disclosed herein includes a first final gate structure for a first transistor device, a second final gate structure for a second transistor device, the first and second transistors having a gate width direction and a gate length direction that is substantially normal to the gate width direction, and an insulating gate separation structure positioned between the first and second final gate structures, the insulating gate separation structure comprising an upper portion and a lower portion, the lower portion having a first lateral width in the gate width direction that is substantially uniform throughout a vertical height of the lower portion, the upper portion having a substantially uniform second lateral width in the gate width direction that is substantially uniform throughout a vertical height of the upper portion, wherein the second lateral width is less than the first lateral width.