Insulating Layer Angles Prevent Step Disconnection and Leak Current
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Solution Overview
Problem
Existing semiconductor apparatuses, such as light emitting and photoelectric conversion devices, face issues with step disconnection and leak currents due to the shape of insulating films between electrodes, which affect the integrity and efficiency of organic layers.
Innovation Solution
A semiconductor apparatus design featuring an insulating layer with specific angled side surfaces and varying lengths, which covers the end of a lower electrode and separates it from an upper electrode via a functional layer, preventing step disconnection and leak currents by controlling the film thickness and resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer with a conventional shape (as discussed in PTL1) is used to prevent step disconnection, then step disconnection is prevented, but leak current is generated between electrodes
Solution Approach 1:
The insulating layer is designed with different inclination angles in different regions: a first inclined portion with 45°-90° angle and a second inclined portion with 0°-45° angle. This local variation in geometric properties prevents step disconnection in the first portion while controlling leak current in the second portion, thus resolving the contradiction between reliability and harmful factors.
Solution Approach 2:
The insulating layer is divided into multiple portions with different inclination angles. The first inclined portion (45°-90°) and second inclined portion (0°-45°) are segmented to perform different functions: one for preventing step disconnection and the other for controlling leak current, thereby resolving the technical contradiction.
2Stability of the object's composition
If the insulating layer is designed to prevent step disconnection, then organic layer integrity is maintained, but film thickness becomes insufficient in certain regions leading to leak current
Solution Approach 1:
By creating different inclination angles in different portions of the insulating layer, the design ensures adequate film thickness in the second inclined portion (0°-45°) where leak current occurs, while maintaining organic layer integrity in the first inclined portion (45°-90°) where step disconnection is prevented.
Data Source
AI summary
A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.