Insulating Layer Between Electrodes Suppresses Discharge

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Solution Overview

Problem

During the inspection of semiconductor elements on a wafer, electric discharge can occur from an energized electrode to adjacent non-target electrodes, leading to potential degradation and operational issues.

Innovation Solution

A method is developed to form insulating layers between electrodes on a semiconductor wafer, applying a specific potential to suppress electric discharge, and strategically removing parts of the insulating layer to expose electrode regions for improved heat dissipation and reduced discharge risk during the inspection and cutting processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a semiconductor element is energized for inspection, then inspection can be performed, but electric discharge occurs to adjacent semiconductor elements

Engineering Contradiction:

Improveinspection capabilityVSAvoidelectric discharge

Core Design Contradiction:

Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

An insulating layer is introduced as an intermediary substance between adjacent semiconductor elements. This insulating layer acts as a mediator that prevents direct electrical contact and discharge between elements during inspection, allowing one element to be energized without affecting neighbors.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The semiconductor wafer is divided into individually isolated elements through the application of insulating layers at boundary portions. This segmentation electrically isolates each element, enabling independent inspection of one element while preventing discharge to adjacent elements.

Inventive Principle:

Principle #1Segmentation

2Reliability

If an insulating layer is formed on the boundary portion between electrodes, then electric discharge is suppressed, but the insulating layer may entangle with the dicing blade during cutting

Engineering Contradiction:

Improveelectric discharge suppressionVSAvoidcutting process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The insulating layer is formed on boundary portions before the dicing process. This preliminary action ensures that electrical isolation is established prior to cutting, preventing discharge during subsequent inspection and manufacturing steps while the cutting process proceeds normally.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The insulating layer is applied selectively only at boundary portions between adjacent semiconductor elements, not across the entire wafer surface. This localized application maintains electrical isolation where needed while leaving other areas clear for dicing blade operation.

Inventive Principle:

Principle #3Local quality

3Temperature

If the insulating layer is removed to expose electrode regions, then heat dissipation is improved, but electric discharge risk increases

Engineering Contradiction:

Improveheat dissipationVSAvoidelectric discharge risk

Core Design Contradiction:

TemperatureVSObject-affected harmful factors

Solution Approach 1:

The insulating layer is removed only from specific electrode regions where heat dissipation is needed, while being retained at boundary portions where electrical isolation is required. This creates different local properties: exposed electrodes for thermal management and covered boundaries for electrical protection.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The insulating layer coverage is segmented into different regions: removed over electrode areas to improve heat dissipation, and maintained at boundary portions to prevent electric discharge. This spatial segmentation allows simultaneous optimization of thermal and electrical properties.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses electric discharge between adjacent semiconductor elements during inspection and enables precise cutting of the wafer without entangling the insulating layer with the dicing blade, reducing defects and enhancing heat dissipation properties of the semiconductor device.

Implementation Method 1

the first insulating layer suppresses an occurrence of electric discharge between the first electrode and the second electrode when the specific potential is applied

Methodology Applied

Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS9633901B2Method for manufacturing semiconductor device

Publication Date: 2017.04.25 DENSO CORP

AI summary

A method for manufacturing a semiconductor device is provided. The method includes forming a first semiconductor element and a second semiconductor element in a semiconductor wafer. The first semiconductor element includes a first electrode formed on a front surface of the semiconductor wafer. The second semiconductor element is adjacent to the first semiconductor element and includes a second electrode formed on the front surface. The method further includes forming a first insulating layer on the front surface located at a first boundary portion between the first electrode and the second electrode; applying a specific potential different from a potential of the second electrode on the first electrode after the formation of the first insulating layer; and cutting the semiconductor wafer at the first boundary portion so as to divide the first semiconductor element from the second semiconductor element.