Inorganic Insulating Layer Formation on Plastic Substrates
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Solution Overview
Problem
The challenge in fabricating LCD devices with plastic substrates is the deformation or degradation caused by high-temperature processes, particularly when forming inorganic insulating layers using chemical vapor deposition (CVD) methods, which results in poor display quality and production issues.
Innovation Solution
A method involving the formation of an inorganic insulating layer using sputtering techniques, where a mixed gas is supplied between a silicon-based target and the substrate, generating plasma and depositing ions onto the substrate, allowing for the creation of a passivation pattern at temperatures between 24°C and 250°C, thus avoiding substrate degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemical vapor deposition (CVD) method is used to form inorganic insulating layer, then the inorganic insulating layer can be formed with good properties, but the substrate temperature must be high (above 300°C) causing plastic substrate deformation or degradation
Solution Approach 1:
The patent changes the deposition method from CVD to sputtering, which allows forming inorganic insulating layers at lower temperatures (below 300°C). This parameter change in the manufacturing process enables the use of plastic substrates while maintaining the quality of the inorganic insulating layer, resolving the contradiction between layer quality and substrate temperature requirements
Solution Approach 2:
The patent replaces the chemical vapor deposition process with a physical sputtering process. Instead of using chemical reactions at high temperatures, the sputtering method uses physical bombardment of ions to deposit the inorganic insulating layer, thereby avoiding the high temperature requirement that causes plastic substrate degradation
2Ease of manufacture
If high temperature process is used to form inorganic insulating layer, then the inorganic insulating layer can be formed effectively, but the plastic substrate deforms or degrades resulting in poor display quality
Solution Approach 1:
The patent changes the temperature parameter from high (above 300°C for CVD) to low (below 300°C for sputtering), enabling effective formation of inorganic insulating layers without degrading the plastic substrate. This parameter change maintains both ease of manufacture and manufacturing precision
Solution Approach 2:
The patent substitutes the chemical-based CVD process with a physical sputtering process, which achieves effective inorganic insulating layer formation through physical means rather than high-temperature chemical reactions, thereby preventing substrate deformation and maintaining display quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of LCD devices with flexible plastic substrates by forming inorganic insulating layers at lower temperatures, maintaining the properties of inorganic insulating layers similar to those formed by CVD, while preventing substrate deformation and improving display quality.
Implementation Method 1
A method of forming an inorganic insulating layer on a substrate by supplying a mixed gas between the substrate and a target and generating a plasma between the substrate and the target, wherein the target comprises a silicon-based material
Implementation Method 2
generating a plasma between the substrate and the target
Data Source
AI summary
A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.