Semiconductor Insulating Pattern Layout for Etch-Reliable Back Contacts
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Solution Overview
Problem
Existing semiconductor devices face challenges in improving integration, reliability, and electrical characteristics, particularly in managing routing congestion and scaling with three-dimensional structures.
Innovation Solution
The semiconductor device incorporates a substrate with a channel layer, gate structure, source/drain patterns, and insulating patterns made of different insulating materials, including a sub-insulating pattern and a main insulating pattern, and employs a nitridation process to form an insulating liner with varying nitrogen concentrations, enhancing the reliability and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single insulating material is used for the insulating pattern, then the manufacturing process is simple, but the reliability is reduced due to etching damage to insulating layers
Solution Approach 1:
The insulating pattern is divided into multiple segments with different insulating materials (first insulating material and second insulating material), where each segment provides specific functionality. The first insulating material layer provides etching resistance while the second insulating material layer provides electrical insulation, resolving the contradiction between manufacturing simplicity and reliability by functional segmentation.
Solution Approach 2:
The insulating pattern uses a composite structure combining different insulating materials with complementary properties. The first insulating material is selected for its resistance to etching materials, while the second insulating material provides the primary insulation function, creating a composite system that overcomes the limitations of single-material approaches.
2Reliability
If the insulating pattern penetrates deep into the substrate, then the electrical characteristics are improved, but the manufacturing complexity increases
Solution Approach 1:
The deep-penetrating insulating pattern is segmented into multiple layers formed at different stages of the manufacturing process. The first insulating material layer is formed initially, followed by the second insulating material layer, allowing each layer to be optimized independently while achieving the overall deep penetration structure required for improved electrical characteristics.
Solution Approach 2:
The first insulating material layer is formed in advance before the second insulating material layer, creating a foundation that simplifies subsequent manufacturing steps. This preliminary action establishes the etching-resistant base that protects underlying structures, reducing the complexity of later processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability and electrical performance of semiconductor devices by reducing damage to insulating layers during etching and increasing the volume of back contact electrodes, thereby enhancing overall device functionality.
Implementation Method 1
at least a portion of the insulating pattern disposed between two source/drain patterns may be formed through a nitridation process
Data Source
AI summary
An example semiconductor device includes a substrate, a channel layer disposed on the substrate, a gate structure surrounding the channel layer, source/drain patterns connected with both sides of the channel layer, a lower wiring structure disposed below the substrate, and an insulating pattern extending through the substrate and disposed between the source/drain patterns below the gate structure. The insulating pattern includes a sub-insulating pattern disposed below the gate structure and a main insulating pattern disposed between the sub-insulating pattern and the lower wiring structure. The sub-insulating pattern and the main insulating pattern include different insulating materials.