Insulating Pattern Blocks Leakage Current in Semiconductor Stressor Design
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Solution Overview
Problem
As semiconductor devices integrate more densely, the distance between stressors and gate lines narrows, leading to increased leakage current between them, which existing technologies have not effectively addressed.
Innovation Solution
A semiconductor device design that includes an insulating pattern in a cavity between the stressor and the device isolation layer, directly contacting the stressor and gate electrode, which helps to block leakage current by using materials like silicon oxide, silicon nitride, or metal oxides, and can include air gaps and recessed areas to enhance contact and reduce current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between stressor and gate line is reduced to achieve high integration, then integration density is improved, but leakage current between stressor and gate line increases
Solution Approach 1:
An insulating pattern is introduced as an intermediary element positioned between the stressor and the gate line. This insulating pattern directly contacts both the stressor and the gate line, creating a physical barrier that blocks the leakage current path while allowing the stressor to maintain its stress-inducing function on the semiconductor layer.
Solution Approach 2:
The insulating pattern extends in the vertical dimension by forming a cavity beneath it that expands between the active area and the device isolation layer. This vertical extension allows the insulating pattern to effectively block leakage current without significantly increasing the horizontal footprint, thus maintaining high integration density.
2Reliability
If an insulating pattern is added to block leakage current, then electrical characteristics are improved, but device complexity increases
Solution Approach 1:
The insulating pattern is merged with existing device structures by directly contacting both the stressor and the gate line, which are already present components. The cavity formation is integrated with the existing device isolation layer structure, allowing the leakage current blocking function to be added without completely redesigning the device architecture.
Solution Approach 2:
The insulating pattern is selectively positioned only where needed - specifically between the stressor and the gate line - rather than being applied universally throughout the device. This localized approach blocks leakage current at the critical interface while minimizing the overall structural complexity and material usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively blocks leakage current between the stressor and gate line, improving the electrical characteristics and integration density of semiconductor devices, offering better performance compared to conventional devices.
Implementation Method 1
An insulating pattern is in the cavity... The insulating pattern may directly contact a side surface of the stressor and the device isolation layer... effectively blocks leakage current between the stressor and gate line
Data Source
AI summary
A semiconductor device includes a stressor and an insulating pattern. A device isolation layer is formed to define an active area on a substrate. A first gate electrode is formed on the active area. A second gate electrode is formed on the device isolation layer. A trench is formed in the active area between the first gate electrode and the second gate electrode. A stressor is formed in the trench. A cavity formed between the stressor and the device isolation layer and adjacent to the second gate electrode is disposed. An insulating pattern is formed in the cavity.