Insulating Spacer With Laterally Extending Portions For Gap Sealing
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Solution Overview
Problem
High aspect ratio trenches in nitride spacers result in vertical seams and gaps, which compromise the material strength and isolation capabilities, particularly in fluid barrier applications, as the gaps act as short circuits and reduce the spacer's effectiveness.
Innovation Solution
A method of forming an insulating spacer with laterally extending portions that minimize gaps by using a process involving deep reactive ion etching and nitride deposition, where the laterally extending portions are etched to desired shapes and configured to provide increased strength and isolation, potentially incorporating hook portions for enhanced mechanical strength and stress isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If high aspect ratio trenches are used to reduce spacer footprint, then device packing density is improved, but vertical seams and gaps form in the deposited nitride layers compromising spacer strength and isolation
Solution Approach 1:
The patent introduces a lateral dimension to the spacer structure by forming laterally extending portions that protrude from the trench regions. This dimensional extension allows the spacer to maintain high aspect ratio vertical trenches for compact footprint while adding horizontal coverage through laterally extending portions that bridge gaps and reinforce structural integrity, effectively resolving the contradiction between reduced footprint and maintained strength.
Solution Approach 2:
The spacer is formed as a composite structure combining vertical trench portions with laterally extending portions, creating a hybrid geometry that leverages the advantages of both configurations. The vertical portions provide height and isolation while the lateral portions provide structural reinforcement and gap coverage, achieving both compact footprint and enhanced strength through compositional design.
2Area of stationary object
If high aspect ratio trenches are used to reduce spacer footprint, then device packing density is improved, but gaps in nitride deposition act as fluid barrier short circuits
Solution Approach 1:
By extending the spacer laterally beyond the trench boundaries, the patent creates an overlapping horizontal barrier that seals gaps in the vertical nitride layers. The laterally extending portions form a continuous fluid barrier path that bypasses the vertical seam gaps, maintaining fluid barrier reliability while preserving the compact high aspect ratio trench footprint.
Solution Approach 2:
The spacer structure employs different geometries in different regions: vertical trench portions for compact footprint and lateral extending portions for gap sealing. This local differentiation allows the spacer to optimize for footprint reduction in vertical regions while simultaneously addressing fluid barrier reliability through extended lateral coverage at critical gap locations.
3Ease of manufacture
If conventional nitride spacer formation is used, then manufacturing process is simple, but gaps reduce isolation capability and create short circuits
Solution Approach 1:
The spacer formation process is segmented into distinct stages: forming vertical trench portions, depositing nitride layers, and creating laterally extending portions. This segmentation allows each component to be optimized independently while maintaining overall process simplicity, with the lateral extensions added as a discrete step that seals gaps without requiring complete process redesign.
Solution Approach 2:
The laterally extending portions are formed as a preliminary structural element before final nitride deposition and processing. By pre-establishing the lateral geometry, subsequent nitride deposition naturally follows the extended contours, sealing gaps along the lateral extensions without requiring additional gap-filling steps, thus maintaining manufacturing simplicity while improving isolation reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces gaps in high aspect ratio trenches, enhancing the mechanical strength and isolation capabilities of the spacer, preventing short circuits and improving the overall performance of the nitride spacer in both electrical and fluid barrier applications.
Implementation Method 1
deep reactive ion etching
Implementation Method 2
nitride deposition
Data Source
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AI summary
In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.