Insulation Plate Air-Gap Reactance Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional insulation plates in inductively coupled plasma substrate processing apparatuses limit the improvement of etching rates due to their inherent reactance, which is affected by the intrinsic dielectric constant and capacitance of the material, restricting the envelope voltage and thus the etching process.
Innovation Solution
An insulation plate with an air-gap feature, where recesses are formed on its surfaces to adjust the total capacitance and reactance, allowing for controlled etching rates by modifying the plasma processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulation plate is used, then the bias power is prevented from being lost, but the reactance is limited by the intrinsic dielectric constant and capacitance, restricting the envelope voltage and etching rate improvement
Solution Approach 1:
The patent changes the physical structure of the insulation plate by introducing air gaps through recesses formed on its surfaces. This structural parameter change modifies the electrical properties (reactance and capacitance) of the insulation plate, enabling better control over envelope voltage and etching rate while maintaining bias power retention functionality.
2Productivity
If the insulation plate material is changed to improve etching rate, then the envelope voltage can be increased, but the bias power loss control becomes difficult
Solution Approach 1:
The air gap introduced in the insulation plate acts as an intermediary element that mediates between the conflicting requirements of high envelope voltage (for etching rate) and low bias power loss. The air gap provides a controllable electrical property that allows optimization of both parameters simultaneously, serving as a bridge between the electrode and the insulation plate.
3Productivity
If the capacitance of the insulation plate is increased, then the reactance changes favorably for etching, but the envelope voltage control becomes restricted
Solution Approach 1:
The patent makes the electrical properties of the insulation plate dynamically adjustable by varying the air gap configuration. The recesses can be designed with different depths, areas, and patterns, allowing the reactance and capacitance to be tuned according to specific process requirements. This dynamic adjustability enables independent optimization of etching rate and envelope voltage control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air-gap design in the insulation plate increases the reactance, leading to a higher envelope voltage and improved etching rates, enhancing the plasma processing efficiency.
Implementation Method 1
the conventional insulation plate changes the reactance (X), which affects the bias power loss, depending on the intrinsic dielectric constant (εr) and the capacitance (C) of the material
Implementation Method 2
the conventional insulation plate changes the reactance (X), which affects the bias power loss, depending on the intrinsic dielectric constant (εr) and the capacitance (C) of the material
Implementation Method 3
an antenna in the form of a coil disposed on a sealing cover, and for receiving first high frequency power to excite the process gas into plasma
Implementation Method 4
two electrodes are disposed to face each other in a chamber, and an RF signal is applied to one or both of the two electrodes to form an electric field in the chamber to generate plasma
Data Source
AI summary
Provided is an apparatus for processing a substrate using plasma, in which an etching rate can be controlled using an insulation plate provided with an air-gap. The substrate processing apparatus includes a chamber including a processing space for processing a substrate using plasma, and a support module located in the processing space and for supporting the substrate, wherein the support module includes a support plate for receiving high frequency power and a first surface disposed under the support plate and facing the support plate, and at least one first recess is formed on the first surface.