Insulation Trench Layering for Higher Breakdown Voltage
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Solution Overview
Problem
Existing electronic circuits with insulation trenches face challenges in increasing breakdown voltage without increasing the thickness of the insulating material, which leads to mechanical stresses due to differing expansion coefficients of materials.
Innovation Solution
The electronic circuit design incorporates a succession of electrically insulating portions and filling portions within the trenches, alternating between the substrate faces, with each trench comprising multiple insulating and filling layers of different materials to enhance voltage resistance without increasing the thickness of the insulating material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the insulating material is increased to increase breakdown voltage, then the voltage resistance is improved, but mechanical stresses increase due to differing expansion coefficients
Solution Approach 1:
The insulating material is divided into multiple alternating layers with filling material, creating a segmented structure. This segmentation allows the insulating function to be distributed across multiple thinner layers rather than one thick layer, reducing mechanical stress while maintaining voltage resistance through cumulative insulation effect
Solution Approach 2:
The trench structure uses composite materials consisting of alternating insulating material layers and filling material layers. This composite approach combines the electrical insulation properties of the insulating material with the mechanical stress-relief properties of the filling material, achieving both high breakdown voltage and reduced mechanical stress
2Reliability
If the thickness of the insulating material is increased to increase breakdown voltage, then the voltage resistance is improved, but the device complexity increases
Solution Approach 1:
The insulating function is segmented into multiple alternating layers with filling material, achieving high breakdown voltage through cumulative insulation rather than a single thick layer, thus avoiding the complexity of handling and processing extremely thick insulating material
Solution Approach 2:
The structure changes from a single thick insulating layer to multiple alternating layers of insulating material and filling material. This parameter change in layer configuration achieves equivalent or superior voltage resistance while simplifying the overall structural complexity and manufacturing process
Data Source
Figure 1~3
Figure 4~6A
Figure 6B~6D
AI summary
The invention relates to an electronic circuit (30) comprising a semiconductor substrate (6) having first and second opposite surfaces (8, 10) and electrical insulation trenches (12, 14). Each trench comprises at least first and second insulating portions (19A, 19B) made of a first insulating material and extending from the first face to the second face, first and second intermediate portions (34A, 34B) extending from the first face to the second face and made of a first filling material, and a third insulating portion (32; 42A, 42B, 52) extending from the first face to the second face, the first insulating portion (19A) being in contact with the first intermediate portion (34A), the second insulating portion (19B) being in contact with the second intermediate portion (34B), and the third insulating portion (32; 42A, 42B; 52) being intercalated between the intermediate portions (34A, 34B).