Organic Thin Film Transistor Insulator Composition
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Solution Overview
Problem
Existing organic thin film transistors face limitations due to low capacitance and high surface energy of organic gate insulators, which hinder performance in large-area, low-cost, and flexible electronic devices, particularly in reducing leakage current density and improving charge carrier mobility.
Innovation Solution
A composition comprising poly(ethylene-alt-maleic anhydride), a cross-linking agent, and a polymer with specific repeating units is used to create a thin film transistor insulator with reduced surface energy and enhanced permittivity, achieved through cross-linking and heat-treatment, resulting in improved organic semiconductor morphology and transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the thickness of the organic gate insulator is reduced to obtain high capacitance, then the capacitance increases, but the electrical insulation performance decreases
Solution Approach 1:
The patent uses a composite material system consisting of poly(ethylene-alt-maleic anhydride) as the base polymer and silane-based crosslinking agents. This composite approach creates a crosslinked network structure that provides both high dielectric constant (improving capacitance) and excellent electrical insulation properties, resolving the contradiction between thin-film capacitance and insulation performance
Solution Approach 2:
The patent modifies the physical and chemical parameters of the organic insulator by introducing crosslinking structures through silane crosslinking agents. This changes the molecular structure from linear to crosslinked network, thereby improving both the dielectric properties (for capacitance) and the electrical breakdown strength (for insulation performance) simultaneously
2Ease of manufacture
If conventional organic gate insulators are used, then the manufacturing process is simple, but the surface energy is high which limits semiconductor adhesion and growth
Solution Approach 1:
The patent applies local quality modification by introducing specific functional groups (silane groups) at the surface region of the organic insulator. The crosslinked surface layer has different properties from the bulk material, providing low surface energy and improved adhesion characteristics locally where semiconductor contact occurs, while maintaining the overall manufacturing simplicity of the solution process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current density, enhances charge carrier mobility, and improves the current on/off ratio of organic thin film transistors by providing a thin insulator with low surface energy and high permittivity, suitable for large-area and flexible electronic devices.
Implementation Method 1
an organic insulator comprising a cross-linked material prepared by mixing poly(ethylene-alt-maleic anhydride), a cross-linking agent, and poly(maleic anhydride-alt-1-alkene)
Implementation Method 2
the inventors developed an organic insulator comprising a cross-linked material prepared by mixing poly(ethylene-alt-maleic anhydride), a cross-linking agent, and poly(maleic anhydride-alt-1-alkene)
Data Source
AI summary
The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.