Insulator System for Ion Implantation Terminal Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional ion implantation systems face inefficiencies and space constraints due to limited voltage capabilities of terminal structures, which restrict the depth of ion implantation in semiconductor wafers, especially for applications like Flash memories requiring higher energies, and are hindered by the need for large enclosures to ensure electrical insulation.
Innovation Solution
An insulator system with a dielectric strength greater than 72 kV/inch is implemented to electrically insulate the terminal structure, allowing for higher voltage energization without dielectric breakdown, thereby enabling higher energy ion implantation while maintaining a compact enclosure footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If air insulation is used for the terminal structure, then the system can be manufactured with simple materials and processes, but the enclosure footprint becomes excessively large due to limited dielectric strength
Solution Approach 1:
The patent changes the dielectric strength parameter from air (72 kV/inch) to solid insulator materials (200-800 kV/inch), enabling the terminal structure to withstand higher voltages in smaller spaces. This parameter change directly resolves the contradiction by allowing compact enclosures while maintaining manufacturing feasibility through standard solid insulator materials.
Solution Approach 2:
The patent employs composite insulation systems combining solid insulator materials with air gaps or other insulating layers. This composite approach achieves high dielectric strength for compact footprint while using simple, well-understood materials that maintain ease of manufacture.
2Area of stationary object
If the terminal structure voltage is limited to 200 kV, then the enclosure size can be kept compact with air insulation, but the ion implantation energy is insufficient for deep well structures in Flash memories
Solution Approach 1:
The patent increases the voltage parameter of the terminal structure from 200 kV to 600 kV or higher by implementing solid insulator systems. This enables the ion implantation energy to reach levels suitable for deep well structures in Flash memories while maintaining a practical enclosure footprint through the high dielectric strength of solid insulators.
3Use of energy by moving object
If downstream accelerators (DC tandem-accelerator or RF linear accelerator) are used to achieve high energy ion implantation, then the ion implantation energy can be increased to 1 MeV and greater, but the system complexity and enclosure footprint increase significantly
Solution Approach 1:
The patent extracts and eliminates the complex downstream accelerator subsystems (DC tandem-accelerator or RF linear accelerator) by instead energizing the terminal structure to high voltages using solid insulators. This extraction removes the source of system complexity and large footprint while achieving the desired high ion implantation energy through a simpler terminal-based approach.
Solution Approach 2:
Instead of adding downstream acceleration stages to increase energy, the patent inverts the approach by maximizing the terminal structure voltage itself to 600 kV or higher. This inversion achieves high ion implantation energy without requiring additional accelerator components, thereby reducing system complexity and footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for higher energy ion implantation without the need for downstream accelerators, improving efficiency and reducing the size of the ion implantation system, thus addressing the limitations of conventional systems and enabling deeper implantation depths.
Implementation Method 1
an insulator system to electrically insulate the terminal structure. The insulator system is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch
Implementation Method 2
A desired impurity material may be ionized in an ion source, the ions may be accelerated to form an ion beam
Implementation Method 3
One method of imparting energy to the ions is straight DC acceleration in which the ions are accelerated by passing them through a DC potential difference
Implementation Method 4
A mass analyzer may then receive the ion beam and may removed undesired species from the ion beam
Data Source
AI summary
An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.