High Voltage Insulator Triple Junction Breakdown Prevention
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Solution Overview
Problem
Current high voltage insulators in ion implanters are prone to triple junction breakdowns, leading to instability and failure due to intensified local electric fields and poor vacuum pressure at the vacuum seal interface gaps, which trigger secondary ionization and breakdown.
Innovation Solution
Incorporating conductive layers between the dielectric and metal electrodes to separate the triple junction regions from the vacuum seal interface gaps, minimizing void formation and reducing local electric fields, thereby preventing breakdowns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a high voltage insulator uses a direct interface between dielectric and metal electrode to maintain vacuum seal, then the structure is simple and ease of manufacture is improved, but triple junction breakdown occurs due to intensified local electric fields and void formation
Solution Approach 1:
A conductive layer is introduced as an intermediary component between the dielectric insulator and the metal electrode. This conductive layer serves as a mediator that eliminates voids at the triple junction region, prevents electric field intensification, and blocks the initiation of secondary ionization. The conductive layer maintains the vacuum seal while resolving the breakdown issue caused by the direct dielectric-electrode interface.
2Reliability
If conductive layers are added between dielectric and metal electrodes to prevent triple junction breakdown, then breakdown resistance is improved, but device complexity increases
Solution Approach 1:
The interface region between the dielectric and metal electrode is segmented by introducing a conductive layer. This segmentation divides the original direct interface into two separate interfaces: one between dielectric and conductive layer, and another between conductive layer and metal electrode. This segmentation eliminates the triple junction void region and prevents breakdown while adding only a single thin conductive layer component.
3Manufacturing precision
If the vacuum seal interface gap is minimized to reduce void formation, then manufacturing precision is improved, but the risk of triple junction breakdown due to electric field intensification remains
Solution Approach 1:
The conductive layer acts as an intermediary that fills and eliminates voids at the triple junction region between dielectric and metal electrode. By placing this conductive material at the interface, it prevents electric field intensification that would otherwise occur in void regions, thereby preventing secondary ionization and breakdown even when manufacturing precision varies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents triple junction breakdowns by trapping gases in spaces between the conductive layers and electrodes, eliminating the risk of secondary ionization and ensuring stable operation of the ion implanter.
Implementation Method 1
the local electric field at the triple junction region is intensified due to the step change of the electrical characteristics at the triple junction region
Implementation Method 2
The dielectric and the metallic conductor together form the vacuum vessel to transport the ion beam and protect it from atmospheric pressure
Implementation Method 3
high voltage is necessary to extract an ion beam from an ion source... accelerates positively charged ions from within the beam as it leaves the source
Data Source
AI summary
A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.