Integral Heat Spreader Structure for Independently Biased GaN Packages
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional heatsink technologies and electronics packaging architectures struggle to both electrically bias semiconductor substrates and provide efficient heat removal for gallium nitride semiconductor devices.
Innovation Solution
The development of electronic packages that incorporate an integral heat spreader with a ceramic-containing layer sandwiched between metal layers, allowing for efficient heat transfer while enabling separate voltage biasing of semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional heatsink technologies are used, then heat removal capability is provided, but the ability to electrically bias semiconductor substrates is lost
Solution Approach 1:
The heatsink is segmented into multiple electrically isolated regions, each capable of providing independent electrical biasing to semiconductor substrates. The bottom metal layer is divided into first and second portions that are electrically isolated from each other, allowing separate voltage application to different dies while maintaining thermal coupling through the ceramic layer.
Solution Approach 2:
A ceramic-containing layer is introduced as an intermediary between the metal layers and semiconductor substrates. This ceramic layer provides electrical isolation while maintaining thermal conduction, enabling the heatsink to simultaneously provide heat removal and electrical biasing functions that were previously mutually exclusive.
2Productivity
If multiple semiconductor devices are co-packaged, then circuit integration is improved, but thermal management complexity increases
Solution Approach 1:
The heatsink structure is designed to serve multiple functions simultaneously: it provides thermal management for multiple semiconductor devices, electrical biasing for each device independently, and structural support for the co-packaged circuit. The integral heat spreader with ceramic-containing layer enables this multi-functionality by combining thermal conduction with electrical isolation in a single component.
3Adaptability or versatility
If separate voltage biasing is implemented, then device control flexibility is improved, but package structure complexity increases
Solution Approach 1:
The electrical biasing function is merged into the thermal management structure itself. The heatsink's metal layers are configured to provide both thermal conduction and electrical biasing, eliminating the need for separate biasing structures and reducing overall package complexity despite the enhanced functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables low thermal resistance, improved switching speed, and circuit stability by allowing efficient heat transfer and independent biasing of multiple gallium nitride semiconductor devices within a single electronic package.
Implementation Method 1
An integral heat spreader is thermally coupled to the first and the second semiconductor dies
Implementation Method 2
enables low thermal resistance along with the ability to apply a voltage bias
Implementation Method 3
the bottom layer of copper including a first portion electrically coupled to the first semiconductor die and a second portion electrically coupled to the second semiconductor die
Data Source
AI summary
An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.