Integrated ALD ALE Chamber for Precise Film Thickness Control
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Solution Overview
Problem
Conventional Atomic Layer Deposition (ALD) and Atomic Layer Etch (ALE) processes are typically performed separately, requiring different reactors and conditions, which limits their integration and efficiency in achieving precise control over film thickness and selectivity in nanoscale processing.
Innovation Solution
Integrating ALD and ALE processes in the same chamber without breaking vacuum, allowing for alternating cycles of etching and deposition using specific gas exposures and plasma treatments to achieve precise control over film thickness and selectivity, with the option to perform etching and deposition in the same chamber using chlorine-containing compounds and reducing agents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ALD and ALE processes are performed separately in different reactors, then each process can be optimized for its specific conditions and chemistry, but the integration and efficiency in achieving precise control over film thickness and selectivity is limited
Solution Approach 1:
The patent combines ALD and ALE processes into a single reactor chamber, allowing sequential execution of deposition and etching cycles. This integration enables precise thickness control through alternating cycles of film deposition and selective removal, while eliminating the need for multiple separate reactors and vacuum breaking between processes.
Solution Approach 2:
The patent employs periodic alternating cycles where the substrate is sequentially exposed to deposition precursors and etching gases. Each cycle deposits a thin film layer followed by selective etching, repeating this periodic sequence to achieve the desired final film thickness with atomic-level precision.
2Productivity
If ALD and ALE processes are performed separately, then process conditions can be optimized independently, but process efficiency and time are reduced due to vacuum breaking and re-establishment
Solution Approach 1:
The patent maintains continuous vacuum conditions throughout the entire process by performing both ALD and ALE operations in the same chamber without breaking vacuum. The substrate remains in the vacuum environment, allowing seamless transition between deposition and etching cycles without time-consuming vacuum breaking and re-establishment.
3Reliability
If conventional separate processes are used, then equipment complexity is reduced, but the ability to protect feature sidewalls during etching and deposition is limited
Solution Approach 1:
The patent performs preliminary ALD deposition cycles before ALE etching cycles to form protective sidewall layers. By depositing thin conformal films in advance, the substrate surfaces are prepared with protective layers that prevent unwanted lateral etching during subsequent ALE processes, ensuring vertical feature profiles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over film thickness and selectivity, protecting feature sidewalls during etching and deposition, improving process efficiency and reducing lateral etching, suitable for high aspect ratio features and applications like MRAM fabrication and selective etching.
Implementation Method 1
Exposing the substrate to the etching gas may further include igniting a plasma
Implementation Method 2
at least some of the deposition precursor adsorbs onto the surface of the substrate during the exposing of the substrate to the deposition precursor
Implementation Method 3
exposing the substrate to a reducing agent to deposit the film
Implementation Method 4
the etching further includes directionally sputtering the substrate
Data Source
AI summary
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.