Integrated Antenna Semiconductor Device with Cavity
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Solution Overview
Problem
Current semiconductor device packaging faces challenges in reducing cost while meeting performance and reliability expectations, particularly in efficiently transmitting and receiving high-frequency radio frequency signals.
Innovation Solution
A compact semiconductor device is designed with an integrated antenna, where a base die and cap die are bonded together, featuring a metal trace as an integrated antenna interconnected via a conductive via, and a cavity optimized for signal propagation, allowing for shorter signal line lengths and higher frequency transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional packaging methods are used, then manufacturing cost is reduced, but RF transmission loss increases and signal frequency is limited
Solution Approach 1:
The patent merges the antenna function with the packaging structure by integrating a metal trace antenna directly into the cap die, combining two previously separate functions (antenna and packaging) into a single integrated structure, thereby reducing RF transmission loss while maintaining manufacturing efficiency
Solution Approach 2:
The patent transitions from planar signal transmission to three-dimensional signal propagation by creating a cavity structure that enables vertical signal paths and optimized electromagnetic field distribution, improving RF performance without increasing manufacturing complexity
2Speed
If conventional packaging structures are used, then device complexity is reduced, but signal frequency transmission capability is limited
Solution Approach 1:
The patent introduces a three-dimensional cavity structure within the cap die that enables optimized electromagnetic wave propagation paths, allowing higher frequency signals to be transmitted effectively while maintaining a compact form factor that does not significantly increase overall device complexity
Solution Approach 2:
The patent optimizes the physical parameters of the cavity structure (dimensions, position, and configuration) to resonate at and efficiently transmit high-frequency signals greater than 100 GHz, transforming the packaging structure from a simple protective enclosure to an active RF performance enhancement component
3Loss of energy
If signal line length is reduced, then RF transmission loss is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent combines the antenna trace formation with the existing packaging fabrication process, using the same metal deposition and patterning steps that are already part of the manufacturing flow, thereby achieving short signal paths without imposing additional precision requirements on the manufacturing process
Data Source
AI summary
A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.


