Integrated Capacitor Display Panel for Thin High-Resolution HMDs

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Solution Overview

Problem

Existing display devices, particularly head-mounted displays, face challenges in achieving high-resolution images while maintaining a reduced thickness, which is crucial for comfort and functionality.

Innovation Solution

The display device incorporates a novel capacitor structure with a first and second capacitor connected to a transistor, featuring a well region and a gate electrode, along with a thinner gate insulating layer, to enhance capacitance and reduce thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional capacitor structure is used, then the display panel thickness is reduced, but the capacitance is insufficient for high-resolution images

Engineering Contradiction:
ImprovecapacitanceVSAvoiddisplay panel thickness
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The capacitor is integrated within the transistor structure by forming the capacitor's electrode within the same well region as the transistor. The gate electrode of the capacitor shares the same spatial domain as the transistor channel, creating a nested configuration that increases capacitance without adding external thickness to the display panel.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The invention transitions from a planar capacitor structure to a three-dimensional configuration by utilizing the vertical depth of the well region. The capacitor electrode extends into the substrate depth, effectively using the third dimension (z-axis) to increase capacitance value without increasing the horizontal footprint or overall panel thickness.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Length of stationary object

If the gate insulating layer is made thinner, then the display panel thickness is reduced, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvedisplay panel thicknessVSAvoidgate insulating layer thickness control
Core Design Contradiction:
Length of stationary objectVSManufacturing precision

Solution Approach 1:

The invention changes the gate insulating layer thickness parameter to a thinner dimension (e.g., reducing from conventional 50-100nm to 20-40nm range) to reduce overall display panel thickness. This parameter change directly contributes to the thinning goal while the manufacturing process is adjusted accordingly to handle the thinner layer requirements.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250351671A1Display device
Publication Date: 2025.11.13 SAMSUNG DISPLAY CO LTD
  • US20250351671A1 patent drawing
  • US20250351671A1 patent drawing
  • US20250351671A1 patent drawing

AI summary

A display device includes: a first transistor; a light emitting element connected to the first transistor; and a first capacitor connected to a gate electrode of the first transistor, wherein the first capacitor includes: a first well region of a substrate; a source electrode and a drain electrode in the first well region; and a gate electrode in a channel region of the first well region, wherein the gate electrode of the first capacitor is connected to the gate electrode of the first transistor.