Integrated Capacitor Light Source Circuit for Shorter dToF Pulses
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Solution Overview
Problem
Conventional dToF driver circuits face limitations due to high series inductance between the capacitor and semiconductor light source, leading to wider optical pulse widths and lower optical power, which restricts the performance of direct time of flight (dToF) systems.
Innovation Solution
Integrate a capacitor within the semiconductor light source by using a first electrode, a first dielectric layer, and a second electrode to form a capacitor, reducing the series inductance and enabling shorter optical pulse widths and larger optical power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a capacitor and charging resistor are disposed on the dToF driver circuit with submount wiring, then the circuit can drive the semiconductor light source, but the series inductance becomes large causing wider optical pulse width and lower optical power
Solution Approach 1:
The patent merges the capacitor into the semiconductor light source package by forming it using the electrode and dielectric layer structures already present in the light source. This integration eliminates the need for separate capacitor components and their connecting wiring, thereby reducing series inductance and improving optical pulse characteristics.
2Object-affected harmful factors
If optimized packaging methods are used such as low-inductance submount and increased wire数量, then some reduction in series inductance is achieved, but the series inductance remains above 0.5 nH restricting performance
Solution Approach 1:
The patent extracts the capacitor function from the external driver circuit and embeds it directly within the semiconductor light source package. This extraction eliminates the need for long submount wiring connections, thereby removing the primary source of series inductance and achieving values below 0.5 nH.
3Productivity
If the capacitor is integrated within the semiconductor light source, then the series inductance is reduced enabling shorter pulse width and larger power, but the device structure becomes more complex
Solution Approach 1:
The patent makes the semiconductor light source package serve multiple functions: it houses the light-emitting structure and simultaneously integrates the capacitor function through its electrode and dielectric layer. This multi-functionality approach adds minimal structural complexity while achieving significant performance improvement by eliminating external capacitor components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration results in improved performance of dToF driver circuits by reducing series inductance, allowing for shorter optical pulse widths and larger optical power, while simplifying the circuit design.
Implementation Method 1
A first dielectric layer is disposed between the first electrode and the second electrode
Implementation Method 2
The semiconductor light source includes an active layer, a first semiconductor layer, a second semiconductor layer
Data Source
AI summary
Provided are a semiconductor light source and a driver circuit thereof. The semiconductor light source includes an active layer, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, and a third electrode. The first semiconductor layer and the second semiconductor layer are located on two opposite sides of the active layer. The first electrode is in ohmic contact with the first semiconductor layer. The third electrode is in ohmic contact with the second semiconductor layer. A first dielectric layer is disposed between the first electrode and the second electrode. The first semiconductor layer is a p-type semiconductor layer, and the second semiconductor layer is an n-type semiconductor layer. Alternatively, the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.