Integrated Capacitor in Power Semiconductor Switch

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Solution Overview

Problem

The physical size of power application circuits is increased and their fabrication becomes complicated due to the use of discreet capacitors, which are required in most power applications.

Innovation Solution

A power semiconductor device with an integrated capacitor, where a capacitor is mechanically and electrically coupled to a power semiconductor switch, utilizing a dielectric body and conductive plates to form a single operative unit, reducing the need for separate components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a capacitor is used as a discreet component in power application circuits, then the circuit can perform required power functions, but the physical size of the circuit is increased

Engineering Contradiction:
Improvepower function performanceVSAvoidcircuit physical size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent combines the capacitor and power semiconductor switch into a single integrated device. The capacitor is formed directly on the power semiconductor die, with conductive plates connected to power electrodes and a dielectric body positioned between them. This merging eliminates the need for separate discrete capacitor components while maintaining the required power function performance.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If discreet capacitors are used in power application circuits, then the required power functions can be achieved, but the fabrication process becomes complicated

Engineering Contradiction:
Improvepower function performanceVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The capacitor fabrication is integrated into the power semiconductor manufacturing process. The dielectric body is deposited between the drain electrode and source electrode using standard semiconductor fabrication techniques, and conductive plates are formed as part of the same process flow. This eliminates the need for separate capacitor assembly steps, simplifying the overall fabrication process.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The capacitor structure is prepared during the power semiconductor fabrication process itself, before final assembly. The dielectric body is deposited and conductive plates are formed in advance as part of the die manufacturing, so that when the device is assembled, the capacitor is already integrated and ready for operation.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If discreet capacitors are used in power application circuits, then the required power functions can be achieved, but the number of components increases

Engineering Contradiction:
Improvepower function performanceVSAvoidnumber of components
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent merges the capacitor function into the power semiconductor switch structure. The capacitor is formed using the existing power electrodes (drain and source) as part of its structure, with the dielectric body positioned between them. This eliminates the need for separate discrete capacitor components while maintaining all required power function performances.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration reduces the physical size of the circuit and simplifies the fabrication process by combining the power semiconductor switch and capacitor into a single unit, enhancing the efficiency and compactness of power application circuits.

Implementation Method 1

a dielectric body disposed between said first conductive plate and said second conductive plate

Methodology Applied
Scientific EffectDielectric: Dielectric

Data Source

PatentUS7348656B2Power semiconductor device with integrated passive component
Publication Date: 2008.03.25 INFINEON TECHNOLOGIES AMERICAS CORP
  • US7348656B2 patent drawing
  • US7348656B2 patent drawing
  • US7348656B2 patent drawing

AI summary

A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof.