Integrated Process Chamber Base for Uniform RF and Thermal Conduction

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Solution Overview

Problem

In semiconductor processing, the existing plasma process apparatuses with cantilever-mounted bases suffer from poor electrical and thermal conductivity due to gaps between the cantilever and chamber wall, leading to non-uniform RF circuit and temperature distribution, resulting in lower wafer yield.

Innovation Solution

A process chamber and semiconductor process apparatus design where the chamber body, base, and cantilevers are formed integrally from conductive and thermally conductive materials, eliminating gaps and enhancing uniformity of RF circuit and temperature distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a base is mounted in the process chamber through a cantilever, then the base can be positioned in the reaction chamber, but gaps exist between the cantilever and chamber wall causing poor electrical conductivity and thermal conductivity

Engineering Contradiction:

Improvewafer yieldVSAvoidelectrical conductivity uniformity

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent merges the base body and cantilever into a single integral structure made of conductive material, eliminating the gap that existed between separate mounted components. This integration ensures continuous electrical and thermal conduction paths from the chamber wall through the cantilever to the base, resolving the conductivity uniformity issue while maintaining positioning functionality.

Inventive Principle:

Principle #5Merging (Combining)

2Temperature

Engineering Contradiction:

Improvetemperature uniformityVSAvoidthermal conductivity

Core Design Contradiction:

TemperatureVSManufacturing precision

Solution Approach 1:

The integral structure of the base body and cantilever made of thermally conductive material creates continuous thermal conduction paths, eliminating thermal resistance at interfaces. This ensures uniform temperature distribution across the base and throughout the reaction chamber, directly improving temperature uniformity while maintaining structural positioning capability.

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If the chamber body, base body, and cantilever are formed integrally, then electrical conductivity and thermal conductivity are improved, but manufacturing complexity increases

Engineering Contradiction:

Improveconductivity uniformityVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines multiple components (chamber body, base body, and cantilever) into a single integral structure that can be manufactured as one piece using additive manufacturing or other integral forming techniques. This approach improves conductivity uniformity by eliminating interface gaps while the use of modern manufacturing methods keeps production complexity manageable.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integral structure is made of conductive material that provides both structural support and electrical/thermal conduction functions. This multi-functional material approach allows the single component to simultaneously serve mechanical and conductive purposes, improving reliability without requiring additional separate conductive elements that would increase manufacturing complexity.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves the uniformity of the RF circuit and temperature distribution, significantly increasing wafer yield while reducing structural instability and maintenance costs.

Implementation Method 1

electrical conductivity between the cantilever and the chamber wall

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

thermal conductivity between the cantilever and the chamber wall

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230402265A1Process chamber and semiconductor process device

Publication Date: 2023.12.14 BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

AI summary

The present disclosure provides a process chamber and a semiconductor process apparatus. The process chamber is applied in the semiconductor process apparatus and includes a chamber body, a base, and a chuck assembly. The reaction chamber is formed in the chamber body. The base is located in the reaction chamber. The chuck assembly is connected to the base and configured to carry a wafer. The base includes a base body and a plurality of cantilevers. The plurality of cantilevers are arranged evenly along the circumference of the base body. Each cantilever is connected to the inner wall of the chamber body and the outer wall of the base body. The chamber body, the base body, and the cantilever have an integral structure and are made of a material having the electrical conductivity and the thermal conductivity.