Integrated Circuit Layout With Differential Gate Pitch Transistors
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Solution Overview
Problem
The miniaturization of integrated circuits poses challenges in design and manufacturing, requiring stricter specifications and affecting reliability, while existing EDA tools struggle to optimize layouts effectively.
Innovation Solution
The integration of transistors with varying gate pitches and active region configurations, such as FinFETs, nanosheet, and nanowire transistors, allows for improved electrical characteristics and flexibility in design, enhancing performance through differential pitches and layouts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistors are miniaturized to reduce device size and power consumption, then device functionality and integration density are improved, but manufacturing precision and reliability become more difficult to maintain
Solution Approach 1:
The patent applies different gate pitches to different transistors within the same integrated circuit. Specifically, first transistors have a first gate pitch while second transistors have a second gate pitch that is different from the first. This local variation in geometric parameters allows optimization of electrical characteristics for different circuit functions while maintaining overall miniaturization benefits.
Solution Approach 2:
The patent changes the geometric parameter of gate pitch to optimize transistor performance. By varying the gate pitch between different transistor types (first transistors with first gate pitch, second transistors with second gate pitch), the patent achieves improved electrical characteristics such as intrinsic gain, reduced parasitic capacitance, and optimized noise figure without requiring uniform miniaturization across all devices.
2Productivity
If transistors are miniaturized to increase integration density, then more functionality is achieved in smaller area, but design and manufacturing specifications become stricter
Solution Approach 1:
Different gate pitches are assigned to different transistors based on their functional requirements. First transistors use a first gate pitch optimized for their specific function, while second transistors use a second gate pitch optimized for their different function. This localized optimization allows high integration density while avoiding uniform strict specifications across all devices.
Solution Approach 2:
The integrated circuit is segmented into different regions with different transistor types and gate pitches. The circuit includes both first transistors with first gate pitch and second transistors with second gate pitch, allowing different design specifications for different segments based on their specific performance requirements.
3Ease of manufacture
If uniform gate pitch is used across all transistors, then manufacturing is simplified, but electrical characteristics such as intrinsic gain and parasitic capacitance cannot be optimized
Solution Approach 1:
The patent implements local quality by assigning different gate pitches to different transistors based on their specific electrical characteristic requirements. First transistors have a first gate pitch optimized for their electrical characteristics, while second transistors have a second gate pitch optimized for their different electrical characteristics, achieving both manufacturing feasibility and electrical performance optimization.
Solution Approach 2:
The gate pitch parameter is varied between different transistor types to optimize electrical characteristics. The first gate pitch and second gate pitch are different, allowing optimization of intrinsic gain, parasitic capacitance, and noise figure for different transistor functions while maintaining a relatively simple manufacturing process.
Data Source
AI summary
An integrated circuit includes a first set of active regions and a first and second set of gates. The first set of active regions extends in a first direction, and is on a first level. The first set of active regions corresponds to a first transistor. The second set of gates extends in a second direction, are on a second level, and overlaps the first set of active regions. The first set of gates corresponds to the first transistor. Each gate of the first set of gates is separated from an adjacent gate of the second set of gates in the second direction by a first pitch. Each gate of the second set of gates is separated from an adjacent gate of the second set of gates in the second direction by a second pitch different from the first pitch.