Integrated Circuit Layout With Front- and Back-Side Power Rails

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Solution Overview

Problem

The miniaturization of integrated circuits has led to stricter design and manufacturing specifications, as well as reliability challenges due to decreasing operating voltages affecting IC performance.

Innovation Solution

The integration of front-side and back-side power rails with transistors of varying sizes in integrated circuits, allowing for a more flexible design and improved performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If ICs are miniaturized to provide more functionality at higher speeds, then device functionality and speed are improved, but operating voltages decrease affecting IC performance and reliability

Engineering Contradiction:
Improvedevice functionality and speedVSAvoidIC performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces dual-sided power rail configurations (front-side and back-side) to address performance degradation from voltage scaling. By utilizing the third dimension (substrate thickness) to route power rails on both sides of the substrate, the design compensates for reduced operating voltages through improved power distribution architecture, allowing miniaturized devices to maintain reliability while achieving higher functionality and speed.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The power distribution network is segmented into front-side power rails and back-side power rails, each serving specific functional blocks. This segmentation allows independent optimization of power delivery to different circuit regions, enabling better control over voltage drops and power integrity in miniaturized high-performance ICs where traditional single-sided power distribution becomes insufficient.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If standard cell layout designs are optimized to meet manufacturing specifications, then manufacturing compliance is improved, but design flexibility is reduced

Engineering Contradiction:
Improvemanufacturing specifications complianceVSAvoiddesign flexibility
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent employs dynamic standard cell structures where power rail connections and transistor configurations can be adapted during design synthesis. The standard cells incorporate selectable power rail assignments (front-side or back-side) and configurable transistor sizes, allowing the design tool to dynamically adjust layouts to meet manufacturing specifications while preserving design flexibility through programmable configuration options.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The design methodology utilizes parameter changes in transistor sizes and power rail assignments to balance manufacturing compliance and design flexibility. By varying transistor dimensions and power connection points according to design requirements and manufacturing constraints, the system achieves both precise manufacturing specification adherence and adaptable design capabilities.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250273573A1Integrated circuit and method of forming the same
Publication Date: 2025.08.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250273573A1 patent drawing
  • US20250273573A1 patent drawing
  • US20250273573A1 patent drawing

AI summary

An integrated circuit includes a first cell region including a first set of transistors having a first size, a second cell region including a second set of transistors having a second size, and a first and second set of conductors. The first and second cell region have a first height. The first and second set of transistors include a corresponding first or second active region on a first level. The first set of conductors is on a first metal layer above a front-side of a substrate and is coupled to the first or second set of transistors. The second set of conductors is on a second metal layer below a back-side of the substrate and is coupled to the first set of transistors. The first and second set of conductors are configured to supply a supply voltage or a reference supply voltage.