Integrated Compound Semiconductor Magnetic Sensor Device
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Solution Overview
Problem
Existing magnetic sensor devices face challenges in achieving both miniaturization and high magnetic sensitivity while being resistant to disturbance noise, with hybrid configurations being large and prone to noise interference, and monolithic configurations having limited sensitivity and noise susceptibility.
Innovation Solution
The sensor device integrates compound semiconductor magnetic sensors between metal wiring layers on a semiconductor substrate, with multiple insulating layers, allowing for miniaturization and improved noise resistance by reducing parasitic capacitance and inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If hybrid configuration is used with wire connections, then magnetic sensitivity is improved, but device size increases and noise resistance deteriorates
Solution Approach 1:
The patent combines the sensor element and signal processing circuit into a single integrated device structure, eliminating the need for external wire connections while maintaining high magnetic sensitivity through direct integration of the sensing function within the compact device body
Solution Approach 2:
The patent transitions from a planar hybrid configuration to a three-dimensional integrated structure, stacking functional layers vertically to achieve high sensitivity within a minimized footprint, effectively resolving the size-sensitivity tradeoff through spatial reorganization
2Measurement precision
If hybrid configuration is used with wire connections, then magnetic sensitivity is improved, but noise resistance deteriorates
Solution Approach 1:
The patent extracts and eliminates the wire connection interface from the system, removing the primary noise coupling path between external circuits and the sensitive sensing element, thereby improving noise resistance while preserving sensitivity through integrated signaling
Solution Approach 2:
The patent introduces an integrated signal processing circuit as an intermediary between the sensor element and external connections, shielding the sensitive sensing node from external noise while maintaining signal integrity through controlled internal signal paths
3Volume of moving object
If monolithic configuration is used, then device size is reduced, but magnetic sensitivity deteriorates
Solution Approach 1:
The patent applies different material properties and structural characteristics to different regions within the integrated device, optimizing the sensing region for high magnetic sensitivity while maintaining overall device miniaturization through localized functional specialization
Solution Approach 2:
The patent employs composite material structures combining different semiconductor materials with complementary properties, achieving high magnetic sensitivity in the sensing region while maintaining compact device dimensions through material-level integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a compact, high-sensitivity magnetic sensor device that effectively mitigates disturbance noise and allows for efficient sensor characteristic correction, suitable for portable devices with reduced package size and power constraints.
Implementation Method 1
a magnetic sensor device is known in which a plurality of hall elements are disposed to obtain a position signal in three-dimensional space... detecting changes in a magnetic field due to the movement of a magnet
Data Source
Figure 1~2
Figure 3A~3B
Figure 4A~4C
AI summary
The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device (100) has a semiconductor substrate (101), a first metal wiring layer (111) provided on the semiconductor substrate (101), a first insulating layer (121) provided on the first metal wiring layer (111), a compound semiconductor sensor element (131) provided on the first insulating layer (121), a second metal wiring layer (112) provided on the compound semiconductor sensor element (131) and the first insulating layer (121), and a second insulating layer (122) provided on the second metal wiring layer (112). A third insulating layer (123) is provided between the first metal wiring layer (111) and the second metal wiring layer (112), and the compound semiconductor sensor element (131) is provided in the third insulating layer (123).