Integrated DC-to-DC Converter Capacitor Design

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Solution Overview

Problem

Conventional DC-to-DC converters require large-capacity capacitors that occupy a significant area in devices, as they are typically formed outside the chip, leading to space inefficiency.

Innovation Solution

A DC-to-DC converter design where a large-capacity capacitor is integrated inside the chip, utilizing a substrate with a switching element region, a transistor, a landing plate, multi-layer metal lines, and an interconnection portion to electrically connect the transistor with the capacitor, allowing for a compact capacitor structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a large-capacity capacitor is formed outside the chip, then the capacitance is sufficient, but the device occupies a large area

Engineering Contradiction:
ImprovecapacitanceVSAvoiddevice area
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The capacitor is merged with the chip structure by forming it over the isolation layer within the chip area. The capacitor includes a bottom plate formed over the isolation layer, a dielectric layer over the bottom plate, and a top plate over the dielectric layer, integrating the capacitor into the chip rather than placing it externally.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The capacitor structure utilizes vertical stacking with multiple layers (bottom plate, dielectric layer, top plate) to increase capacitance density. By stacking components vertically over the isolation layer, the design achieves large capacitance within a compact footprint area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If a capacitor is formed inside the chip, then the device area is reduced, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvedevice areaVSAvoidmanufacturing process complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The isolation layer is formed first to define the switching element region, creating a prepared substrate structure. The landing plate is formed over the isolation layer before the capacitor structures are built, establishing a foundation that simplifies subsequent capacitor formation processes.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The chip is segmented into distinct functional regions: a switching element region defined by the isolation layer and a capacitor region formed over the isolation layer. This spatial segmentation allows independent optimization and manufacturing of different components within the integrated structure.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9704854B2DC-to-DC converter and method for fabricating the same
Publication Date: 2017.07.11 SK HYNIX INC
  • US9704854B2 patent drawing
  • US9704854B2 patent drawing
  • US9704854B2 patent drawing

AI summary

A DC-to-DC converter includes: a substrate having a switching element region defined by an isolation layer; a transistor formed over the switching element region; a landing plate formed over the isolation layer; a capacitor formed over the landing plate and includes a bottom plate, a dielectric layer and a top plate; multi-layer metal lines disposed in an upper portion of the transistor and coupled with the transistor; and an interconnection portion coupled with the multi-layer metal lines to electrically connect the transistor with the capacitor.