Integrated Die Temperature Sensor for RF Amplifier Thermal Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional thermal overload protection systems in high power RF amplifiers are conservative due to delayed temperature detection by external sensors, leading to unnecessary inhibition of high power operation and potential overheating issues, especially in applications with rapid changes in input signal power and load impedance.
Innovation Solution
Incorporating temperature sensors directly into the semiconductor die with transistors, allowing for low latency and accurate measurement of temperature changes within the active region, enabling quicker thermal management and more reliable high power operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external temperature sensors are used on the amplifier package surface, then thermal protection is provided, but temperature detection is delayed and high power operation is unnecessarily inhibited
Solution Approach 1:
The temperature sensor is merged with the transistor by forming it within the same semiconductor die, specifically in the drift region between the collector and substrate. This integration eliminates the time delay associated with external sensors by placing the sensing element directly at the heat generation site, enabling immediate temperature detection while maintaining thermal protection reliability.
Solution Approach 2:
The temperature sensor is nested within the transistor structure itself, utilizing the drift region of the transistor as the sensing location. This nested configuration allows the sensor to be embedded inside the active device without adding external components, achieving both compact integration and immediate thermal monitoring capability.
2Reliability
If external temperature sensors are used, then thermal protection is achieved, but the sensors are located far from heat generation causing slow response to temperature spikes
Solution Approach 1:
The temperature sensor is merged with the transistor by forming it within the same semiconductor die, specifically in the drift region between the collector and substrate. This integration eliminates the time delay associated with external sensors by placing the sensing element directly at the heat generation site, enabling immediate temperature detection while maintaining thermal protection reliability.
3Reliability
If conservative thermal protection is used to ensure safety, then overheating is prevented, but high power operation is unnecessarily inhibited
Solution Approach 1:
The integrated temperature sensor provides real-time feedback on the actual transistor temperature to the control circuit. This immediate feedback enables the system to distinguish between normal temperature rises during high power operation and dangerous overheating conditions, allowing high power operation to continue when safe while providing rapid protection when needed, thus resolving the contradiction between safety and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes delays in temperature sensing, allowing for more precise thermal control and enabling higher power and more reliable operation of high power RF amplifiers by quickly reacting to thermal overloads.
Implementation Method 1
a first temperature sensor between a first transistor element in the plurality of transistor elements and a second transistor element in the plurality of transistor elements. The first temperature sensor is configured to generate a first output signal having a magnitude that is proportional to a temperature of the first temperature sensor
Data Source
AI summary
A device includes a semiconductor die including a transistor. The transistor includes a plurality of parallel transistor elements. Each transistor element includes a drain region, a source region, and a gate region. The semiconductor die includes a first temperature sensor between a first transistor element in the plurality of transistor elements and a second transistor element in the plurality of transistor elements. The first temperature sensor is configured to generate a first output signal having a magnitude that is proportional to a temperature of the first temperature sensor.