Integrated Driver Circuit Layout for Compact High-Voltage Control
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Solution Overview
Problem
Existing driving circuits for semiconductor high-voltage power devices have a larger volume and lower integration level, limiting their effectiveness in power electronic products.
Innovation Solution
A driving circuit with a control module and a driving signal output module, where at least two transistors are epitaxially grown on the same substrate, allowing for the control of the operation state of a to-be-driven device, thereby achieving miniaturization and higher integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If existing driving circuit designs are used, then the circuit can control power devices, but the volume is large and integration level is low
Solution Approach 1:
The patent merges multiple transistors onto a single substrate to form an integrated driving circuit. Specifically, at least two transistors are integrated on one substrate, with their sources/drain electrodes connected to form a shared power supply terminal, eliminating the need for separate discrete components and reducing overall circuit volume while achieving high integration.
Solution Approach 2:
The shared power supply terminal formed by connecting sources/drain electrodes of multiple transistors serves multiple functions: it provides power to multiple transistor channels simultaneously, reduces the number of required power terminals, and enables compact circuit布局. This multi-functional design contributes to both volume reduction and integration enhancement.
2Area of stationary object
If discrete transistors are used in driving circuit, then each transistor can be independently controlled, but the overall circuit occupies larger area
Solution Approach 1:
Multiple transistors are merged onto a single substrate with shared power terminals, significantly reducing the circuit area. The shared source/drain electrode connections allow multiple transistors to occupy less space compared to discrete implementations, while maintaining independent gate control for each transistor through separate control electrodes.
Solution Approach 2:
The patent transitions from a planar discrete layout to a three-dimensional integrated structure where multiple transistors are stacked or arranged in overlapping configurations on the same substrate. This dimensional change allows more transistors to be packed into a smaller footprint area while maintaining independent control paths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a smaller volume and higher integration level of the driving circuit, enhancing the control and efficiency of power electronic products by reducing conduction resistance and parasitic capacitance, enabling high-frequency operation and reduced power consumption.
Implementation Method 1
the at least two transistors are epitaxially grown on the same substrate
Data Source
AI summary
The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.