Integrated Electro-Optic Device Low Voltage Modulation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing electro-optic devices require high modulation voltages, which are not efficiently provided by conventional semiconductor integrated circuits, limiting their application in telecommunications and high-speed computing.

Innovation Solution

An integrated electro-optic device is developed, featuring a semiconductor integrated circuit configured to drive an electro-optic polymer modulator at a relatively low voltage without additional amplification, utilizing a patterned top metal layer, planarization layer, bottom and top cladding, and electrodes to form a Mach Zehnder optical modulator with hyperpolarizable organic chromophores, enabling efficient light modulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If conventional semiconductor integrated circuits are used to drive electro-optic devices, then the device complexity is reduced, but the modulation voltage requirement cannot be met

Engineering Contradiction:

Improvedevice complexityVSAvoidmodulation voltage

Core Design Contradiction:

Device complexityVSPower

Solution Approach 1:

The patent combines the semiconductor integrated circuit with the electro-optic modulator into a single integrated device. The semiconductor circuit and electro-optic layers are formed together on the same substrate, eliminating the need for separate voltage amplification stages and reducing overall device complexity while providing the required high modulation voltage directly at the modulator.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The electro-optic modulator is nested within the semiconductor integrated circuit structure. The electro-optic layers are positioned directly over the semiconductor circuit layers, with the modulator embedded in the integrated device architecture, allowing the high voltage generation to be contained within the integrated circuit itself.

Inventive Principle:

Principle #7Nested doll (Nesting)

2Power

If additional voltage amplification is added to meet modulation voltage requirements, then the power requirement is met, but the device complexity increases

Engineering Contradiction:

Improvemodulation voltageVSAvoiddevice complexity

Core Design Contradiction:

PowerVSDevice complexity

Solution Approach 1:

The voltage amplification function is merged into the semiconductor integrated circuit itself. The circuit includes amplification stages that directly generate the high modulation voltage needed by the electro-optic modulator, eliminating the need for external amplification equipment and reducing overall device complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor integrated circuit is designed to perform multiple functions: signal processing, voltage amplification, and direct driving of the electro-optic modulator. This multi-functional design eliminates the need for separate dedicated amplification stages, reducing device complexity while meeting power requirements.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Manufacturing precision

If high modulation voltages are used, then the modulation depth is improved, but the power consumption increases

Engineering Contradiction:

Improvemodulation depthVSAvoidpower consumption

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent optimizes the electro-optic material properties and device geometry to achieve high modulation depth at lower voltages. By changing the material parameters and structural dimensions, the device achieves acceptable modulation depths at reduced drive voltages, thereby lowering power consumption.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for high-speed optical modulation at low drive voltages, achieving acceptable modulation depths and phase control, suitable for telecommunications and computing applications, with reduced power consumption and improved device performance.

Implementation Method 1

Methodology Applied

Scientific EffectElectro-optic effect: Electro-Optic Effects

Data Source

PatentUS8483524B2Integrated electro-optic device and method of making

Publication Date: 2013.07.09 LIGHTWAVE LOGIC INC

AI summary

An electro-optic polymer semiconductor integrated circuit includes one or more doped regions configured to drive one or more electrodes, and the electrodes are configured to drive a juxtaposed electro-optic core. The assembly may include a planarization layer disposed at least partially coplanar with the electrodes. The circuit may include an integrated multiplexer, driver configured to receive a signal from the multiplexer, at least one high speed electrode configured to be driven by the driver and modulate light energy passed through a hyperpolarizable poled chromophore regions disposed near the high speed electrode. The circuit may include a calibration storage circuit. The circuit may include, during fabrication, structures to provide voltage to a buried electrode and a shield to prevent damage from the poling field.