Integrated ESD Protection Circuit With Adjustable Avalanche Clamping
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Solution Overview
Problem
Existing semiconductor devices and integrated circuits are vulnerable to damage from voltage or current spikes caused by electrostatic discharge (ESD) events, and existing protection circuits are either space-consuming or lack adjustable trigger voltage capabilities.
Innovation Solution
An ESD protection circuit incorporating a bipolar transistor and an Avalanche diode integrated in a semiconductor body, where the emitter and collector regions are laterally spaced, with a trigger element connected between the emitter and base, allowing for adjustable clamping of voltage spikes through the Avalanche diode's breakdown voltage and triggering the transistor at a defined threshold.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor with load path connected in parallel and control circuit is used for ESD protection, then the circuit can switch on the transistor when voltage reaches trigger voltage to provide low-ohmic current path, but the circuit consumes more space and has higher complexity
Solution Approach 1:
The patent merges the Avalanche diode and bipolar transistor into a single integrated structure where the base region and collector region of the bipolar transistor simultaneously form the Avalanche diode. This integration eliminates the need for separate control circuits and reduces the number of discrete components, thereby reducing circuit complexity while maintaining ESD protection functionality
Solution Approach 2:
The bipolar transistor serves multiple functions: it acts as both the ESD protection switch and forms part of the Avalanche diode structure through its base and collector regions. The lateral spacing between emitter and collector regions enables the transistor to provide low-ohmic current path during ESD events while the integrated Avalanche diode structure provides voltage clamping, combining multiple protection mechanisms in one component
2Reliability
If traditional ESD protection circuits are implemented with separate components, then the protection function is achieved, but the circuit occupies more area in the semiconductor device
Solution Approach 1:
The Avalanche diode and bipolar transistor are merged into a single integrated structure within the semiconductor body, sharing common regions (base and collector regions form both the transistor and the Avalanche diode). This spatial merging significantly reduces the total area occupied compared to separate discrete components
Solution Approach 2:
The Avalanche diode structure is nested within the bipolar transistor structure, where the base and collector regions of the transistor simultaneously constitute the Avalanche diode. This nesting arrangement allows one structure to be contained within another, maximizing space utilization and minimizing the overall circuit footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides effective, space-efficient ESD protection with adjustable clamping voltage, safeguarding semiconductor devices by limiting voltage spikes and enabling efficient current diversion, thus preventing damage.
Implementation Method 1
An Avalanche diode is provided. The bipolar transistor and the Avalanche diode are integrated in a semiconductor body
Implementation Method 2
In an ESD process electric charge is transferred in short time from an object, such as a charged person, a charged electrical cable, or charged manufacturing equipment, to a circuit node connected to the semiconductor device or the IC
Data Source
Figure 1~2
Figure 3~4
Figure 5A~5B
AI summary
An electronic circuit is disclosed. The electronic circuit includes first and second circuit nodes (11, 12); a bipolar transistor (2) including an emitter region (21) connected to one of the first and second circuit nodes (11, 12), a collector region (22) connected to the other one of the first and second circuit nodes (11, 12), and a base region (23); a trigger element (3) connected between the emitter region (21) and the base region (23) of the bipolar transistor (2); and an Avalanche diode (4). The bipolar transistor (2) and the Avalanche diode (3) are integrated in a semiconductor body (100), wherein the emitter region (21) and the collector region (23) are spaced apart from each other in a lateral direction of the semiconductor body (100), and wherein the base region (23) and the collector region (22) of the bipolar transistor (2), at the same time, form the Avalanche diode (4).