Integrated ESD Diode in Semiconductor Light Emitting Device
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Solution Overview
Problem
Existing semiconductor light emitting devices, particularly III-nitride devices, face limitations in design flexibility and light source size due to external silicon structures used for electrostatic discharge protection, which can increase the size and complexity of the device and optics, as well as the small size of the electrostatic discharge protection diode limiting its effectiveness.
Innovation Solution
Integrating circuit elements such as silicon diodes, resistors, capacitors, and inductors between the semiconductor structure and connection layers, with these elements being electrically connected between contacts and connection layers, and isolated by dielectric layers, allowing for a more distributed n-contact configuration and improved electrostatic discharge protection without increasing the device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external silicon structures are used for electrostatic discharge protection, then electrostatic discharge protection is provided, but device size and structural complexity increase
Solution Approach 1:
The patent combines the electrostatic discharge protection function with the existing semiconductor structure by integrating a silicon diode within the device footprint. The silicon diode is formed using the same epitaxial growth process as the light emitting structure, merging protection functionality into the device itself rather than adding external protection structures.
Solution Approach 2:
The silicon diode structure serves multiple functions: it provides electrostatic discharge protection while also being integrated into the device fabrication process. The same epitaxial growth process that creates the light emitting structure also forms the silicon diode, making the structure multi-functional and reducing overall device complexity.
2Reliability
If external silicon structures are used for electrostatic discharge protection, then electrostatic discharge protection is provided, but light source size increases
Solution Approach 1:
The silicon diode for electrostatic discharge protection is merged with the light emitting structure by forming both in the same epitaxial growth process. This integration allows the protection function to be achieved within the existing device footprint without increasing the light source size.
3Area of moving object
If the electrostatic discharge protection diode size is reduced, then device size is minimized, but protection effectiveness is limited
Solution Approach 1:
The patent transitions from planar diode structures to vertically stacked structures by forming the silicon diode in the vertical epitaxial growth direction. This dimensional change allows increased junction area and improved protection effectiveness without increasing the lateral device footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the flexibility of the device design, improves light-emitting efficiency, and provides more effective electrostatic discharge protection by allowing a larger junction area for the diode, potentially increasing light emission and reducing the risk of damage from substrate removal techniques.
Implementation Method 1
The circuit element comprises at least one metal layer isolated from one portion of the device by a dielectric layer
Implementation Method 2
a light emitting or active region formed over the n-type layer or layers
Data Source
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AI summary
One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.