Integrated Fuse-Resistor Structure Without Extra Mask Steps
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Solution Overview
Problem
Conventional semiconductor device manufacturing processes face challenges in achieving sufficient sheet resistance in shrinking resistors, leading to increased complexity and costs.
Innovation Solution
A semiconductor device structure is designed with a fuse and resistor integrated in a semiconductor substrate, utilizing an isolation structure between them, and formed through an integrated process flow without additional masks or steps, ensuring high sheet resistance and reduced costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional process flow is used to form shrinking resistors, then device miniaturization is achieved, but sheet resistance becomes insufficient
Solution Approach 1:
The patent applies local quality by forming a lightly-doped region adjacent to the isolation structure while keeping the bulk resistor region heavily doped. This creates a localized area with different doping characteristics that provides sufficient sheet resistance without increasing the overall resistor footprint, thus resolving the contradiction between miniaturization and sheet resistance maintenance.
2Reliability
If additional masks or process steps are added to improve sheet resistance, then sheet resistance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the formation of the lightly-doped region with the existing isolation structure formation process. The lightly-doped region is created using the same isolation structure as a mask, combining two functions (isolation and doping protection) into one process step, thereby improving sheet resistance without adding manufacturing complexity.
Solution Approach 2:
The isolation structure serves multiple functions: it provides electrical isolation between devices and simultaneously acts as a mask for forming the lightly-doped region. This multi-functionality reduces the need for additional process steps while achieving the desired sheet resistance improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated process flow reduces associated costs and improves the performance of the semiconductor device structure by maintaining high sheet resistance and simplifying manufacturing.
Implementation Method 1
an isolation structure disposed in a semiconductor substrate... The isolation structure is disposed between the fuse and the resistor electrode
Implementation Method 2
a source/drain (S/D) region disposed in the semiconductor substrate and between the fuse and the isolation structure. The S/D region is electrically connected to the resistor electrode
Data Source
AI summary
A semiconductor device structure includes an isolation structure disposed in a semiconductor substrate. The semiconductor device structure also includes a fuse and a resistor electrode disposed in the semiconductor substrate. The isolation structure is disposed between the fuse and the resistor electrode, and the isolation structure is closer to the resistor electrode than the fuse. The semiconductor device structure further includes a source/drain (S/D) region disposed in the semiconductor substrate and between the fuse and the isolation structure. The S/D region is electrically connected to the resistor electrode.