Integrated Gate Contact Platform for Semiconductor Manufacturing
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Solution Overview
Problem
Conventional gate contact formation in semiconductor manufacturing involves multiple separate stand-alone tools, leading to issues like high Q-times, environmental exposure, defectivity, and lack of real-time process control, which hinder high-volume manufacturing efficiency.
Innovation Solution
An integrated manufacturing platform with etching, film-forming, and transfer modules allows for a controlled environment where all processing steps are performed without breaking vacuum, enabling real-time metrology and corrective actions to ensure process specifications are met.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple separate stand-alone tools are used for gate contact formation, then each tool can be optimized for its specific function, but the production time increases due to queue waiting time and environmental exposure between tools
Solution Approach 1:
The patent combines multiple separate processing tools (etching tool, deposition tool, annealing tool) into a single integrated processing tool that can perform all gate contact formation steps sequentially without breaking vacuum. This eliminates queue waiting time and environmental exposure between tools, directly resolving the contradiction between process control stability and production rate.
Solution Approach 2:
The integrated processing tool maintains continuous vacuum environment throughout all processing steps, allowing the workpiece to remain in the processing chamber from etching through deposition to annealing without interruption. This continuous action eliminates the downtime and environmental exposure that would otherwise occur between separate tools, thereby increasing productivity while maintaining reliability.
2Ease of manufacture
If multiple separate stand-alone tools are used for gate contact formation, then tool specialization is achieved, but the workpiece is exposed to ambient environment causing oxidation and defectivity
Solution Approach 1:
The integrated processing tool maintains a continuous vacuum environment throughout all processing steps, preventing the workpiece from being exposed to ambient air and subsequent oxidation. The vacuum chamber serves as a protective inert environment that eliminates environmental damage while allowing complex multi-step processing to be performed sequentially.
3Measurement precision
If stand-alone metrology tools are used for process monitoring, then measurement capability is provided, but significant time is lost due to queue waiting and measurement duration
Solution Approach 1:
The patent integrates a metrology tool within the processing tool, allowing real-time measurements to be performed on the workpiece during the processing sequence without removing it to a separate metrology station. This eliminates queue waiting time and reduces total measurement time while maintaining measurement precision.
Solution Approach 2:
The integrated metrology tool enables continuous monitoring of the workpiece throughout the processing steps without interrupting the vacuum environment or process flow. Measurements are performed in-situ, eliminating the time loss associated with transporting workpieces to separate metrology tools and waiting in queues.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs, improves yield and defectivity, and enables continuous high-volume manufacturing by maintaining the workpiece within a controlled environment throughout the processing sequence.
Implementation Method 1
treating the semiconductor contact surface in one of the one or more etching modules to remove contamination therefrom
Implementation Method 2
depositing a metal layer within the contact feature in one of the one or more film-forming modules
Implementation Method 3
forming a metal silicide and/or germanide layer by reaction of at least a portion of the deposited metal layer with the semiconductor contact surface
Data Source
AI summary
A method is provided for gate contact formation on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform (CMP) hosting one or more film-forming modules, one or more etching modules, and one or more transfer modules. A workpiece having a contact feature formed therein, and inspected throughout, the contact feature having a semiconductor contact surface exposed, is received into the CMP. A plurality of metal layers is deposited at a bottom of the contact feature after the workpiece is treated to remove contamination. The integrated sequence of processing steps is executed within the CMP without leaving the controlled environment, the transfer modules used to transfer the workpiece between the modules while maintaining the workpiece within the controlled environment.