Integrated Ion Implanter and Laser Annealer Scanner
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Solution Overview
Problem
Current semiconductor fabrication processes require separate tools for ion implantation and annealing, which increases the number of process steps and introduces inefficiencies due to the need for photoresist patterning and subsequent removal steps.
Innovation Solution
A single tool integrating an ion implanter and a laser annealing device, with a scanner for precise positioning and control, allows for simultaneous ion implantation and annealing without the use of photoresist, reducing the number of process steps and equipment needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate tools are used for ion implantation and annealing with photoresist patterning, then precise control over doping regions is achieved, but the number of process steps increases and processing time is extended
Solution Approach 1:
The patent combines ion implantation and annealing functions into a single integrated tool, allowing both processes to be performed sequentially on the same equipment without removing the wafer. This merging eliminates the need for separate tools and reduces the number of process steps while maintaining precise control through the scanner positioning system.
Solution Approach 2:
The patent removes photoresist from the process by using direct ion implantation through the scanner system. The implantation is controlled by positioning the wafer under the ion beam only in the desired regions, eliminating the need for photoresist patterning, exposure, development, and removal steps.
2Reliability
If separate tools for implantation and annealing are used, then each tool can be optimized for its specific function, but equipment cost and process complexity increase
Solution Approach 1:
The integrated tool is designed to perform multiple functions: ion implantation, laser annealing, and precise wafer positioning through the scanner system. This multi-functional design reduces the number of separate tools needed while maintaining the ability to optimize each function through dedicated components within the unified platform.
Solution Approach 2:
The patent merges implantation and annealing capabilities into one tool, reducing equipment count and process complexity. The scanner positioning system serves both functions, and the wafer remains on the same stage throughout, eliminating the need for multiple tool transitions.
3Manufacturing precision
If photoresist is used for patterning before implantation, then selective doping is achieved, but additional processing steps and material removal are required
Solution Approach 1:
The patent extracts photoresist from the process entirely, using direct ion implantation controlled by the scanner positioning system. The wafer is positioned under the ion beam only in the regions where doping is desired, achieving selective doping without any photoresist patterning steps.
Solution Approach 2:
The patent replaces the chemical photoresist system with a mechanical positioning system (scanner). Instead of using chemical patterns to guide implantation, the system uses precise mechanical positioning to deliver ions only to the desired locations, eliminating all photoresist-related processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach streamlines the process by eliminating the need for photoresist, thereby reducing processing time and costs while ensuring precise control over implantation and annealing, enhancing overall process integration and efficiency.
Implementation Method 1
ion implantation and annealing that reduces the process steps so they may be implemented on a single tool
Implementation Method 2
laser annealing device, with a scanner for precise positioning and control, allows for simultaneous ion implantation and annealing
Data Source
AI summary
A method and system for integrated circuit (IC) processing combines an ion implantation tool and a laser anneal tool in a single unit with a shared precision X-Y scanner. A semiconductor wafer is loaded onto a the X-Y table of the scanner. Data defining the desired ion implantation is used to first customize circuit areas on the semiconductor wafer by gating ON and OFF the ion beam while semiconductor wafer is scanned. Any inadvertent ion beam interruptions are noted by storing the locations of the interruptions. The wafer is then reprocessed to correct faults caused by the interruptions. The laser anneal tool positions the laser beam over the semiconductor wafer it is then scanned while gating the laser beam ON and OFF to custom anneal the wafer devices. Again, any inadvertent laser beam interruptions are detected and the locations of the interruptions are stored for reprocessing to correct faults.