Integrated Ion-Sensing Probe with Co-located Passive Electrodes
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Solution Overview
Problem
Existing ion concentration measurement technologies, such as glass electrodes and ISFETs, face issues like high cost, noise interference, drift, and the need for external reference electrodes, limiting their precision and widespread use.
Innovation Solution
An integrated ion-sensitive probe with a semiconductor substrate and co-located passive electrodes, including a reference electrode, that provides a reduced-size, cost-effective solution with integrated electronics for accurate ion concentration measurement, minimizing noise and drift, and enabling precise pH and temperature sensing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If glass electrode systems are used for ion concentration measurement, then measurement precision is maintained, but device complexity and cost increase due to high output impedance requiring wire medium and external amplifiers
Solution Approach 1:
The patent integrates the ion-sensitive electrode, reference electrode, and amplifier circuitry into a single monolithic semiconductor device. The indicating electrode and reference electrode are formed on the same semiconductor substrate with their respective amplifiers integrated directly onto the substrate, eliminating the need for external wire medium and separate amplifier systems, thereby reducing device complexity while maintaining measurement precision
Solution Approach 2:
The semiconductor substrate serves multiple functions simultaneously: it acts as the structural platform for both the indicating and reference electrodes, provides integrated amplifier circuits for both electrodes, and enables low-impedance signal output. This multi-functionality consolidates what would traditionally require separate components into a single integrated device
2Measurement precision
If glass electrode systems are used for ion concentration measurement, then measurement precision is maintained, but noise coupling to wire medium increases
Solution Approach 1:
By integrating both the indicating and reference electrodes with their amplifier circuits on the same semiconductor substrate, the patent eliminates long wire medium connections that are prone to noise coupling. The integrated architecture keeps all signal paths short and controlled, significantly reducing susceptibility to electromagnetic interference and noise
Solution Approach 2:
The patent replaces the mechanical wire medium connection system with an integrated semiconductor-based electrical connection system. The wire medium that physically connects external amplifiers to the electrodes is replaced by integrated circuit traces and on-substrate amplifier circuits, eliminating the noise coupling pathway inherent in wire-based connections
3Volume of moving object
If ISFET technology is used for ion sensing, then device size is reduced, but measurement reliability deteriorates due to charge trapping, hysteresis and drift
Solution Approach 1:
The patent integrates both the indicating electrode and reference electrode with their respective amplifiers on the same semiconductor substrate, creating a balanced differential measurement system. This integration allows for precise matching and compensation of electrical characteristics, reducing drift and improving measurement stability while maintaining the compact size advantage of solid-state technology
Solution Approach 2:
The integrated reference electrode and its amplifier provide a stable reference signal that enables differential measurement and compensation techniques. The feedback mechanism through the integrated architecture allows real-time compensation for drift and hysteresis effects, improving measurement reliability without sacrificing the compact form factor
4Volume of moving object
If ISFET technology is used for ion sensing, then device size is reduced, but manufacturing precision requirements increase due to charge trapping and hysteresis issues
Solution Approach 1:
By forming both the indicating and reference electrodes on the same semiconductor substrate using integrated circuit fabrication techniques, the patent achieves precise matching of electrode characteristics through standard manufacturing processes. The simultaneous fabrication on the same substrate ensures consistent electrical properties and reduces variability, lowering the effective manufacturing precision requirements while maintaining compact size
5Adaptability or versatility
If external reference electrodes are used with ISFET indicating electrodes, then measurement function is completed, but device complexity increases
Solution Approach 1:
The patent merges the indicating electrode and reference electrode into a single integrated unit on the same semiconductor substrate, with both electrodes and their respective amplifiers co-located. This integration completes the measurement function while eliminating the complexity of connecting and coordinating separate external reference electrodes, as both electrodes are now part of a unified device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated ion-sensitive probe offers reduced size and cost, improved accuracy, and faster temperature equilibrium, reducing noise interference and enabling new market applications, including high-performance disposable probes.
Implementation Method 1
a first passive electrode integrated with the semiconductor substrate and configured to contact the solution and to provide a first electrical voltage as a function of the concentration of an ion within the solution
Implementation Method 2
an amplifier circuit integrated with the semiconductor substrate and connected to the first passive electrode and the second passive electrode
Data Source
AI summary
An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.