Integrated LED Transistor Semiconductor Device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in improving light extraction efficiency and efficient driving for applications in display panels and communication devices, where the materials and manufacturing methods for light emitting diodes and transistors differ, affecting their performance and production yield.
Innovation Solution
A semiconductor device design incorporating a light-emitting structure with a first and second conductivity type semiconductor layer, a transistor with a semiconductor layer, source, gate, and drain electrodes, and bonding pads, optimized for improved light extraction and efficient control, allowing for enhanced light emission and data transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different materials are used for light emitting diode and transistor, then device functionality is achieved, but manufacturing complexity and production yield are reduced
Solution Approach 1:
The patent merges the light emitting diode and transistor into a single integrated structure where the transistor is formed on the same semiconductor substrate as the LED. The transistor's source, drain, and gate electrodes are integrated with the LED's semiconductor layers, allowing both components to be manufactured using the same material system (III-V semiconductor compounds) and similar fabrication processes, thereby reducing manufacturing complexity while maintaining device functionality
Solution Approach 2:
The patent creates a universal manufacturing process that can produce both light emitting diodes and transistors using the same materials and techniques. The III-V semiconductor substrate serves multiple functions: as the base for LED growth and as the substrate for transistor formation. This multi-functionality approach allows a single fabrication line to produce both device types without requiring separate material deposition and processing steps
2Reliability
If different manufacturing methods are used for light emitting diode and transistor, then device performance is optimized, but production yield is reduced
Solution Approach 1:
The patent combines the manufacturing of LEDs and transistors into a single integrated process flow. Both devices are formed on the same III-V semiconductor substrate using compatible epitaxial growth techniques and similar fabrication steps. This merging of manufacturing methods maintains the performance optimization of each device type while enabling simultaneous production, thereby improving overall production yield
Solution Approach 2:
The patent utilizes parameter changes in the semiconductor fabrication process to differentiate between LED and transistor regions while using the same base materials. By adjusting doping concentrations, layer thicknesses, and structural configurations during the manufacturing process, both device types achieve their optimal performance characteristics from a unified manufacturing approach, improving production efficiency and yield
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances light extraction efficiency and provides efficient driving and control, improving the performance of semiconductor devices in display panels and communication devices, enabling better light emission and data transmission capabilities.
Implementation Method 1
A light emitting diode (LED) is one of semiconductor devices that emit light when current is applied
Data Source
AI summary
A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.