Integrated Lithographic Cell for Double Patterning

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Solution Overview

Problem

Current lithographic technologies face limitations in imaging features smaller than determined by a k1 factor of about 0.25 in a single exposure-develop-process cycle, with double exposure and double process techniques being either slow or having a limited range of applicable structures.

Innovation Solution

A lithographic cell comprising a lithographic apparatus and process apparatus, including a fill apparatus and a strip apparatus, controlled by a unit that fills apertures in a first pattern with a filler, applies a second layer of radiation-sensitive material, exposes and develops it to form a second pattern, and fills the resulting apertures with a second filler, allowing for the creation of structures with an effective k1 value less than or equal to 0.25 without removing the fillers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a double process technique is used to create structures with k1 value less than 0.25, then the manufacturing precision is improved, but the productivity deteriorates due to slow cycle time requiring substrate removal for etch steps

Engineering Contradiction:
Improvecritical dimensionVSAvoidcycle time
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent combines the lithographic apparatus with process apparatus (spin coater, developer, bake & chill plates) into an integrated lithographic cell, allowing multiple processing steps to be performed sequentially without substrate removal. This merging of functions enables double patterning to achieve k1 < 0.25 while maintaining high productivity through continuous processing.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The lithographic cell is designed as a multi-functional system that can perform lithography, coating, development, and other processing steps within a single integrated platform. This universal design allows the system to execute complex double patterning sequences without requiring substrate transfer to separate equipment, thereby reducing cycle time while maintaining manufacturing precision.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If a double exposure technique is used to reduce cycle time, then the productivity is improved, but the manufacturing precision deteriorates due to limited structural range

Engineering Contradiction:
Improvecycle timeVSAvoidstructural range
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The system employs dynamic process control where the lithographic apparatus can switch between different exposure modes and the process apparatus can adjust coating and development parameters in real-time. This dynamic capability allows the system to perform both double exposure and double patterning techniques within the same integrated cell, maintaining both high productivity and broad structural range.

Inventive Principle:
Principle #15Dynamics

3Productivity

If multiple processing steps are performed in sequence without substrate removal, then the productivity is improved, but the device complexity increases due to integration of lithographic apparatus and process apparatus

Engineering Contradiction:
ImprovethroughputVSAvoidsystem integration
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent integrates the lithographic apparatus with process apparatus including spin coater, developer, and bake & chill plates into a unified lithographic cell. This merging allows sequential processing steps to be performed without substrate removal, improving throughput while managing complexity through integrated control systems that coordinate all components.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the creation of structures with a k1 value less than 0.25 by reducing cycle time and ensuring greater uniformity and throughput, as the method avoids substrate removal from the lithographic cell between exposures, thus overcoming the limitations of existing techniques.

Implementation Method 1

Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate

Methodology Applied
Scientific EffectPhotography: Photography

Implementation Method 2

exposing and developing the second layer of radiation-sensitive material to form second apertures

Methodology Applied
Scientific EffectPhoto-oxidation: Photo-oxidation

Data Source

PatentUS7646468B2Lithographic processing cell and device manufacturing method
Publication Date: 2010.01.12 ASML NETHERLANDS BV
  • US7646468B2 patent drawing
  • US7646468B2 patent drawing
  • US7646468B2 patent drawing

AI summary

A double processing technique for device manufacture includes performing a first patterning step to form apertures in a resist layer which apertures are filled before the first resist layer is stripped and replaced by a second resist layer to be used in the second exposure.