Integrated MDM Interconnect Capacitor for Electromigration Control

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Solution Overview

Problem

Current interconnect technologies face challenges with increasing resistivity in narrower copper lines, leading to reliability failures due to high current densities in wide power lines, which are prone to current spikes and electromigration, especially in high-performance computing applications.

Innovation Solution

The integration of a metal-dielectric-metal (MDM) capacitor within wide power lines, formed using a composite metallization scheme, which includes a first metal material for signal lines, a dielectric material, and a second metal material for power lines, creating an MDM capacitor that stabilizes current density and reduces power supply noise without requiring a separate capacitor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If wider copper lines are used for power lines to reduce resistance, then electrical conductivity is improved, but current density increases leading to electromigration and reliability failures

Engineering Contradiction:
ImproveresistanceVSAvoidelectromigration
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent merges the power line and capacitor into a single integrated structure. The capacitor is formed within the same cavity as the power line, with the dielectric material surrounding the power line conductor. This integration allows the power line to maintain its wide cross-section for low resistance while the surrounding dielectric and opposing conductor provide capacitance to stabilize current density and reduce electromigration effects.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The capacitor is nested within the power line structure. The dielectric material is deposited to line the cavity walls, and the power line conductor is positioned within this dielectric environment. The capacitor's electric field is effectively nested around the power line, providing local electromagnetic stabilization without requiring separate external capacitor components.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If separate capacitors are added to stabilize current density and reduce noise, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvecurrent density stabilizationVSAvoidnumber of components
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the power line and capacitor into a single integrated structure. The capacitor is formed within the same cavity as the power line, with the dielectric material surrounding the power line conductor. This integration allows the power line to maintain its wide cross-section for low resistance while the surrounding dielectric and opposing conductor provide capacitance to stabilize current density and reduce electromigration effects.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated structure serves multiple functions simultaneously: the wide copper power line provides low-resistance power delivery, while the surrounding dielectric and opposing conductor form a capacitor that stabilizes current density and filters noise. This multi-functional design eliminates the need for separate dedicated capacitor components while achieving both power delivery and current stabilization goals.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Quantity of substance

If additional capacitor components are integrated into the interconnect structure, then capacitance density increases, but manufacturing process complexity increases

Engineering Contradiction:
Improvecapacitance densityVSAvoidmanufacturing process
Core Design Contradiction:
Quantity of substanceVSEase of manufacture

Solution Approach 1:

The dielectric material is deposited to line the cavity walls before the power line conductor is formed. This preliminary action creates the capacitor's dielectric layer in advance, establishing the capacitance structure before the conductive element is added. This sequence allows the capacitor to be pre-formed within the cavity, simplifying subsequent manufacturing steps while achieving high capacitance density.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The capacitor is formed in the vertical dimension by lining the cavity walls with dielectric material, rather than adding horizontal layers. This vertical utilization of space allows the capacitor to be integrated within the existing cavity volume without requiring additional lateral space or complex multi-layer stacking, thereby maintaining manufacturing simplicity while achieving high capacitance density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution increases capacitance density and stabilizes current without additional components, enhancing the reliability of interconnects by reducing the likelihood of failures due to current spikes and noise, thus improving chip performance.

Implementation Method 1

depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

the first metal material, further dielectric material, and second metal material form a capacitor in the second cavity

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11908738B2Interconnect including integrally formed capacitor
Publication Date: 2024.02.20 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US11908738B2 patent drawing
  • US11908738B2 patent drawing
  • US11908738B2 patent drawing

AI summary

A method of making a semiconductor component includes depositing a first metal material onto a structure having a first cavity and a second cavity such that the first metal material fills the first cavity and forms a first lining on exposed surfaces of the second cavity. The method further includes depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining. The method further includes depositing a second metal material onto the structure such that the second metal material fills remaining volume in the second cavity.